| Presentation | 2002/6/24 Preparation of HfO_2 thin films by chemical vapor deposition for gate-insulator applications Makoto NAKAYAMA, Kenji TAKAHASHI, Hiroshi FUNAKUBO, Eisuke TOKUMITSU, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | HfO_2 thin films were deposited on p-type Si (100) substrates by the chemical vapor deposition technique using Hf(O_<-t>C_4H_9)_4 as a source material. Capacitance-voltage (C-V) characteristics of Al/HfO_2/SiO_2/Si/Ag structures had little hysteresis and an SiO_2 equivalent oxide thickness (EOT) of 1.8nm was obtained for the sample with a physical HfO_2 thickness of 2.5 nm. HRTEM image shows the presence of 1 .4 nm interfacial layer. The relative dielectric constant ε_r of the HfO_2 layer and the thickness of the interfacial layer, estimated from the EOT plot as a function of HfO_2 physical thickness, are 19.7 and 1.4nm, respectively. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | CVD / HfO_2 / High-k / gate-insulator / HTB |
| Paper # | ED2002-147 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Preparation of HfO_2 thin films by chemical vapor deposition for gate-insulator applications |
| Sub Title (in English) | |
| Keyword(1) | CVD |
| Keyword(2) | HfO_2 |
| Keyword(3) | High-k |
| Keyword(4) | gate-insulator |
| Keyword(5) | HTB |
| 1st Author's Name | Makoto NAKAYAMA |
| 1st Author's Affiliation | P&I Lab , Tokyo Institute of Technology() |
| 2nd Author's Name | Kenji TAKAHASHI |
| 2nd Author's Affiliation | Dep. Innov. Eng. Mater , Tokyo Institute of Technology |
| 3rd Author's Name | Hiroshi FUNAKUBO |
| 3rd Author's Affiliation | Dep. Innov. Eng. Mater , Tokyo Institute of Technology |
| 4th Author's Name | Eisuke TOKUMITSU |
| 4th Author's Affiliation | Res. Inst. Electrical Communication, Tohoku Univ. |
| Date | 2002/6/24 |
| Paper # | ED2002-147 |
| Volume (vol) | vol.102 |
| Number (no) | 175 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |