| Presentation | 2002/6/24 Study of the Thermally Stimulated Current (TSC) characteristics of (Ba,Sr)TiO_3 Thin Films Yong-Ju Kim, Hee Chul Lee, Min-Sung Choi, Ki-Seon Lee, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In order to clarify the origin of the dielectric relaxation current in (Ba,Sr)TiO_3 thin films, thermally stimulated current(TSC) measurement is adopted combining the conventional current-voltage(I-V) and current-time(I-t) measurements. Two TSC peaks are observed from BST films before post-annealing, and the activation energies of these two traps are 0.20(±0.01)eV and 0.45(±0.02)eV. It is found that these two TSC peaks disappear after subsequent post-annealing in oxygen ambient in contrast to that the peaks drastically increase after the post-annealing in vacuum ambient. From these results, the oxygen vacancy is attributed to the origin of the dielectric relaxation current. Further, TSC characteristics for (Ba,Sr)TiO_3 thin film capacitor with the thermal post-annealing shows the same change in the traps as I-V and I-t characteristics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | BST / TSC / oxygen vacancy / trap |
| Paper # | ED2002-146 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2002/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study of the Thermally Stimulated Current (TSC) characteristics of (Ba,Sr)TiO_3 Thin Films |
| Sub Title (in English) | |
| Keyword(1) | BST |
| Keyword(2) | TSC |
| Keyword(3) | oxygen vacancy |
| Keyword(4) | trap |
| 1st Author's Name | Yong-Ju Kim |
| 1st Author's Affiliation | Department of EECS, Korea Advanced Institute of Science and Technology() |
| 2nd Author's Name | Hee Chul Lee |
| 2nd Author's Affiliation | Department of EECS, Korea Advanced Institute of Science and Technology |
| 3rd Author's Name | Min-Sung Choi |
| 3rd Author's Affiliation | Department of EECS, Korea Advanced Institute of Science and Technology |
| 4th Author's Name | Ki-Seon Lee |
| 4th Author's Affiliation | Physics, Chungnam National University |
| Date | 2002/6/24 |
| Paper # | ED2002-146 |
| Volume (vol) | vol.102 |
| Number (no) | 175 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |