| Presentation | 2002/6/24 The Electrical Characteristics of Deep Metal Contact to P+Active in MDL (Merged DRAM and Logic) Interconnection Application JaeHan Cha, YoonJang Kim, JungHwan Lee, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The electrical characteristics of deep M1C_P+ active resistance with various process conditions are evaluated. The changes of contact resistance were checked for the metal contacts with several contact aspect ratio and different barrier metal structures. We obtained the stable M1C_P+ active resistance, which had 6.7～11.9 contact aspect ratios. We calculated TiSi_2/P+Si interface Schottky barrier height and doping levels of metal contact interface with various barrier metal Ti thicknesses from the interpretation of external voltage dependence of M1C_P+ Kelvin resistance by using the Thermionic-Field emission model. We explained the barrier metal Ti thickness effect to metal contact to P+ active resistance with these results. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SoC / MDL / M1C / Barrier Metal / Ti-Silicide / Thermionic Field Emission Model / Work function / Spreading Resistance / Schottkey Contact / Ohmic contact / Specific Contact Resistance |
| Paper # | ED2002-144 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The Electrical Characteristics of Deep Metal Contact to P+Active in MDL (Merged DRAM and Logic) Interconnection Application |
| Sub Title (in English) | |
| Keyword(1) | SoC |
| Keyword(2) | MDL |
| Keyword(3) | M1C |
| Keyword(4) | Barrier Metal |
| Keyword(5) | Ti-Silicide |
| Keyword(6) | Thermionic Field Emission Model |
| Keyword(7) | Work function |
| Keyword(8) | Spreading Resistance |
| Keyword(9) | Schottkey Contact |
| Keyword(10) | Ohmic contact |
| Keyword(11) | Specific Contact Resistance |
| 1st Author's Name | JaeHan Cha |
| 1st Author's Affiliation | SoC Device Development Team, System IC R&D, HYNIX Electronics Industries Co.,Ltd.() |
| 2nd Author's Name | YoonJang Kim |
| 2nd Author's Affiliation | SoC Device Development Team, System IC R&D, HYNIX Electronics Industries Co.,Ltd. |
| 3rd Author's Name | JungHwan Lee |
| 3rd Author's Affiliation | SoC Device Development Team, System IC R&D, HYNIX Electronics Industries Co.,Ltd. |
| Date | 2002/6/24 |
| Paper # | ED2002-144 |
| Volume (vol) | vol.102 |
| Number (no) | 175 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |