| Presentation | 2002/6/24 Effect of hexamethyldisilazane on the electrical characteristics of a porous silica thin film S. Sakamoto, K. Komura, T. Kikkawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The effect of hexamethyldisilazane (HMDS) vapor treatment on the leakage current and capacitance of the porous silica thin film having periodic structure were investigated. The leakage current and dielectric constant of the film increased during measurement in the air due to moisture absorption. It is found that the HMDS treatment of the silica film could suppress the increase of leakage current and dielectric constant. The increase of leakage current and dielectric constant could be suppressed by approximately 1/100, and 1/10, respectively. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HMDS / Hexamethyldisilazane / Mesoporous / Porous silica / Low-k |
| Paper # | ED2002-143 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of hexamethyldisilazane on the electrical characteristics of a porous silica thin film |
| Sub Title (in English) | |
| Keyword(1) | HMDS |
| Keyword(2) | Hexamethyldisilazane |
| Keyword(3) | Mesoporous |
| Keyword(4) | Porous silica |
| Keyword(5) | Low-k |
| 1st Author's Name | S. Sakamoto |
| 1st Author's Affiliation | Research Center for Nanodevices, Hiroshima University() |
| 2nd Author's Name | K. Komura |
| 2nd Author's Affiliation | Research Center for Nanodevices, Hiroshima University |
| 3rd Author's Name | T. Kikkawa |
| 3rd Author's Affiliation | Research Center for Nanodevices, Hiroshima University |
| Date | 2002/6/24 |
| Paper # | ED2002-143 |
| Volume (vol) | vol.102 |
| Number (no) | 175 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |