Presentation 2002/6/24
Formation of Ti-capped NiSi and its Barrier Properties against Cu Diffusion
Soo-Jin Park, Keun-Woo Lee, Ju-Youn Kim, Kyoo-Sik Bae,
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Abstract(in English) The formation of NiSi with the Ti capping layer to improve the thermal stability and the feasibility for utilizing this Ti-capping layer as a barrier against Cu diffusion were investigated. It was found that the Ti capping layer suppressed the Ni diffusion, and thus the agglomeration of NiSi films and the formation of NiSi_2 phase, leading to the better thermal stability. Furthermore, the Ti-capping or TiN layer inhibited the Cu diffusion. However, NiSi dissociated due to the presence of Cu and then Ni diffused into the Cu layer.
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Keyword(in English) NiSi / Ti Capping Layer / Thermal Stability / Cu Diffusion Barrier
Paper # ED2002-142
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Committee ED
Conference Date 2002/6/24(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Formation of Ti-capped NiSi and its Barrier Properties against Cu Diffusion
Sub Title (in English)
Keyword(1) NiSi
Keyword(2) Ti Capping Layer
Keyword(3) Thermal Stability
Keyword(4) Cu Diffusion Barrier
1st Author's Name Soo-Jin Park
1st Author's Affiliation Department of Electronic Materials Engineering, The University of Suwon()
2nd Author's Name Keun-Woo Lee
2nd Author's Affiliation Department of Electronic Materials Engineering, The University of Suwon
3rd Author's Name Ju-Youn Kim
3rd Author's Affiliation Department of Materials Engineering, Hanyang University
4th Author's Name Kyoo-Sik Bae
4th Author's Affiliation Department of Electronic Materials Engineering, The University of Suwon
Date 2002/6/24
Paper # ED2002-142
Volume (vol) vol.102
Number (no) 175
Page pp.pp.-
#Pages 6
Date of Issue