| Presentation | 2002/6/24 Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect Yong Tae Kim, Hyunsang Sim, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have deposited the W-N diffusion barrier with pulse plasma enhanced atomic layer deposition (PPALD) method by using WF_6 and NH_3. It is very difficult to deposit W-N film with ALD method by using WF_6 and NH_3 due to the fast Si catalytic reaction with WF_6 since the deposition rate is as low as 0.5 Å/cycle. However, using PPALD method the N content is uniformly distributed into the W-N film. The deposition rate per cycle is ～2.2 Å/cycle in the ALD temperature window of 350～400℃. As a diffusion barrier for the Cu interconnect, high resolution-TEM reveals that 22 nm thick W-N successfully prevents Cu diffusion after annealing at 600℃ for 30 min. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | pulse plasma / atomic layer deposition / W-N / diffusion barrier / Cu interconnect |
| Paper # | ED2002-141 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characteristics of pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect |
| Sub Title (in English) | |
| Keyword(1) | pulse plasma |
| Keyword(2) | atomic layer deposition |
| Keyword(3) | W-N |
| Keyword(4) | diffusion barrier |
| Keyword(5) | Cu interconnect |
| 1st Author's Name | Yong Tae Kim |
| 1st Author's Affiliation | Semiconductor Materials and Devices Lab.() |
| 2nd Author's Name | Hyunsang Sim |
| 2nd Author's Affiliation | Semiconductor Materials and Devices Lab. |
| Date | 2002/6/24 |
| Paper # | ED2002-141 |
| Volume (vol) | vol.102 |
| Number (no) | 175 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |