| Presentation | 2002/6/24 Formation of [111] Preferentially Oriented Cu Layer on [110] Nb Barrier on SiO_2 Md. MANIRUZZAMAN, Mayumi B. TAKEYAMA, Atsushi NOYA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The [111] oriented Cu layer, which was attracted much attention as an interconnect layer of excellent electronmigration resistance, was obtained on the [110] oriented Nb barrier formed on the thermally grown SiO_2 layer. The rocking curves measured by X-ray diffraction revealed the full width at half maximum (FWHM) values of 6.0° and 3.0° for asdeposited [110] Nb and [111] Cu layers, respectively, which was a good measure of the mosaicity in the prepared thin film assembly. This result suggested that the [111] oriented Cu layer of good quality was obtained on amorphous SiO_2 by using the buffer layer of [110] oriented Nb as a diffusion barrier. The model system of Cu/Nb/SiO_2/Si was thermally stable without excess solid-phase reaction and/or diffusion upon annealing at temperatures up to 500℃ or higher. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | metallization / diffusion barrier / preferred orientation / copper / niobium |
| Paper # | ED2002-140 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of [111] Preferentially Oriented Cu Layer on [110] Nb Barrier on SiO_2 |
| Sub Title (in English) | |
| Keyword(1) | metallization |
| Keyword(2) | diffusion barrier |
| Keyword(3) | preferred orientation |
| Keyword(4) | copper |
| Keyword(5) | niobium |
| 1st Author's Name | Md. MANIRUZZAMAN |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology() |
| 2nd Author's Name | Mayumi B. TAKEYAMA |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology |
| 3rd Author's Name | Atsushi NOYA |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology |
| Date | 2002/6/24 |
| Paper # | ED2002-140 |
| Volume (vol) | vol.102 |
| Number (no) | 175 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |