| Presentation | 2002/6/24 Fabrication of SON(Silicon on Nothing)-MOSFET and Its ULSI Applications Tsutomu SATO, Hideaki NII, Masayuki HATANO, Keiichi TAKENAKA, Hisataka HAYASHI, Kazutaka ISHIGO, Tomoyuki HIRANO, Kazuhiko IDA, Nobutoshi AOKI, Tatsuya OHGURO, Kazumi INO, Ichiro MIZUSHIMA, Yoshitaka TSUNASHIMA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A practical method for the formation of silicon on nothing (SON) structure with a desired size and shape has been developed, which is named as the empty space in silicon (ESS) technique. The concept of ESS technique and properties of SON structure fabricated by ESS technique are presented. SON-MOSFET was successfully fabricated for the first time by using ESS technique as an alternative of SOI-MOSFET. Advantage of SON structure was experimentally demonstrated. SON structure formed by ESS technique is appropriate for System on a Chip (SoC) applications, such as embedded trench DRAMs and digital-analog mixed devices, due to the merit that SON structure can be fabricated partially on bulk substrate. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SON(Silicon on Nothing) / SOI(Silicon on Insulator) / ESS(Empty Space in Silicon) / silicon migration / hydrogen annealing |
| Paper # | ED2002-138 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2002/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of SON(Silicon on Nothing)-MOSFET and Its ULSI Applications |
| Sub Title (in English) | |
| Keyword(1) | SON(Silicon on Nothing) |
| Keyword(2) | SOI(Silicon on Insulator) |
| Keyword(3) | ESS(Empty Space in Silicon) |
| Keyword(4) | silicon migration |
| Keyword(5) | hydrogen annealing |
| 1st Author's Name | Tsutomu SATO |
| 1st Author's Affiliation | Semiconductor Company TOSHIBA Corporation() |
| 2nd Author's Name | Hideaki NII |
| 2nd Author's Affiliation | Semiconductor Company TOSHIBA Corporation |
| 3rd Author's Name | Masayuki HATANO |
| 3rd Author's Affiliation | Semiconductor Company TOSHIBA Corporation |
| 4th Author's Name | Keiichi TAKENAKA |
| 4th Author's Affiliation | Semiconductor Company TOSHIBA Corporation |
| 5th Author's Name | Hisataka HAYASHI |
| 5th Author's Affiliation | Semiconductor Company TOSHIBA Corporation |
| 6th Author's Name | Kazutaka ISHIGO |
| 6th Author's Affiliation | Semiconductor Company TOSHIBA Corporation |
| 7th Author's Name | Tomoyuki HIRANO |
| 7th Author's Affiliation | Semiconductor Company TOSHIBA Corporation |
| 8th Author's Name | Kazuhiko IDA |
| 8th Author's Affiliation | Semiconductor Company TOSHIBA Corporation |
| 9th Author's Name | Nobutoshi AOKI |
| 9th Author's Affiliation | Semiconductor Company TOSHIBA Corporation |
| 10th Author's Name | Tatsuya OHGURO |
| 10th Author's Affiliation | Semiconductor Company TOSHIBA Corporation |
| 11th Author's Name | Kazumi INO |
| 11th Author's Affiliation | Semiconductor Company TOSHIBA Corporation |
| 12th Author's Name | Ichiro MIZUSHIMA |
| 12th Author's Affiliation | Semiconductor Company TOSHIBA Corporation |
| 13th Author's Name | Yoshitaka TSUNASHIMA |
| 13th Author's Affiliation | Semiconductor Company TOSHIBA Corporation |
| Date | 2002/6/24 |
| Paper # | ED2002-138 |
| Volume (vol) | vol.102 |
| Number (no) | 175 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |