Presentation 2002/6/24
The C-R Method Used for Leff Extraction and Process Optimization in Nano N/P-MOSFET's Devices
Heng-Sheng Huang, Chi-Chin Hu, Chien-Tung Yuen, Jen-Hung Fang, Hsin-Nan Chen, Jwo Shiun Sun, J. K. Chen, Garry Hong,
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Abstract(in English) In this paper, a modified C-V method (C-R method) is adopted to improve the nano-MOSFET device performance by optimizing the S/D engineering. Using the C-R method (the Capacitance-Ratio method), more consistent and reasonable L_ can be extracted and the process bias (including L_ and L_) can be exactly measured for the N/PMOS devices with halo and Ge implant process. Comparing the I-V data, those parameters can be used to analysis device characteristics under various S/D engineering conditions, and then can be used to help optimizing the nano-MOSFET devices.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) C-R method / effective channel length (L_) / nano-device / halo implant / short channel effect / 2-D effect / MSJZ model
Paper # ED2002-136
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Committee ED
Conference Date 2002/6/24(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) The C-R Method Used for Leff Extraction and Process Optimization in Nano N/P-MOSFET's Devices
Sub Title (in English)
Keyword(1) C-R method
Keyword(2) effective channel length (L_)
Keyword(3) nano-device
Keyword(4) halo implant
Keyword(5) short channel effect
Keyword(6) 2-D effect
Keyword(7) MSJZ model
1st Author's Name Heng-Sheng Huang
1st Author's Affiliation Institute of Mechatronics Engineering, National Taipei University of Technology()
2nd Author's Name Chi-Chin Hu
2nd Author's Affiliation Institute of Computer, Communication and Control, National Taipei University of Technology
3rd Author's Name Chien-Tung Yuen
3rd Author's Affiliation Institute of Mechatronics Engineering, National Taipei University of Technology
4th Author's Name Jen-Hung Fang
4th Author's Affiliation Institute of Mechatronics Engineering, National Taipei University of Technology
5th Author's Name Hsin-Nan Chen
5th Author's Affiliation Institute of Mechatronics Engineering, National Taipei University of Technology
6th Author's Name Jwo Shiun Sun
6th Author's Affiliation Institute of Computer, Communication and Control, National Taipei University of Technology
7th Author's Name J. K. Chen
7th Author's Affiliation Central R_D Division, United Microelectronics Corporation
8th Author's Name Garry Hong
8th Author's Affiliation Central Integration Division, United Microelectronics Corporation
Date 2002/6/24
Paper # ED2002-136
Volume (vol) vol.102
Number (no) 175
Page pp.pp.-
#Pages 5
Date of Issue