Presentation | 2002/6/24 Design and Fabrication of SiC RESURF MOSFETs Hajime Kosugi, Taichi Hirao, Hiroshi Yano, Jun Suda, Tsunenobu Kimoto, Hiroyuki Matsunami, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Design consideration and characteristics of the fabricated SiC RESURF MOSFETs are described. The RESURF (REduced SURface Field) structure is one of the most widely-used concepts for the design of lateral high-voltage devices, which are key components in power integrated circuits. The RESURF structure in SiC lateral MOSFETs was optimized by using a device simulator. Then RESURF MOSFETs were fabricated on 6H-SiC. A MOSFET exhibited the maximum breakdown-voltage of 700 V and the minimum specific on-resistance of 0.69 Ωcm^2. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | silicon carbide / power MOSFET / RESURF / simulation |
Paper # | ED2002-130 |
Date of Issue |
Conference Information | |
Committee | ED |
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Conference Date | 2002/6/24(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Design and Fabrication of SiC RESURF MOSFETs |
Sub Title (in English) | |
Keyword(1) | silicon carbide |
Keyword(2) | power MOSFET |
Keyword(3) | RESURF |
Keyword(4) | simulation |
1st Author's Name | Hajime Kosugi |
1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
2nd Author's Name | Taichi Hirao |
2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
3rd Author's Name | Hiroshi Yano |
3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
4th Author's Name | Jun Suda |
4th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
5th Author's Name | Tsunenobu Kimoto |
5th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
6th Author's Name | Hiroyuki Matsunami |
6th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
Date | 2002/6/24 |
Paper # | ED2002-130 |
Volume (vol) | vol.102 |
Number (no) | 175 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |