Presentation 2002/6/24
A New Junction Termination in Power Semiconductor Devices employing Trench
Jae-Keun OH, Min-woo HA, Kwang-Seok SEO, Yearn-Ik CHOI, Min-Koo Han,
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Abstract(in English) We have proposed a new junction termination method by employing a shallow oxide trench in order to decrease the junction termination area without sacrificing the breakdown voltage characteristics of the power semiconductor devices. The proposed trench floating field-limiting ring structure decrease the total junction termination area by reducing the space between field-limiting rings (FLR). Reduced space can be obtained due to reduced lateral diffusion region and lower dielectric constant of the silicon dioxide. Our simulations results show that the total junction termination area is considerably decreased with same breakdown voltage condition. Junction termination area of 600V rated device is decreased by 20% compared with that of the conventional FLR structure.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) junction termination / field-limiting ring / breakdown
Paper # ED2002-129
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Committee ED
Conference Date 2002/6/24(1days)
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Registration To Electron Devices (ED)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A New Junction Termination in Power Semiconductor Devices employing Trench
Sub Title (in English)
Keyword(1) junction termination
Keyword(2) field-limiting ring
Keyword(3) breakdown
1st Author's Name Jae-Keun OH
1st Author's Affiliation School of Electrical Eng. #50, Seoul National University()
2nd Author's Name Min-woo HA
2nd Author's Affiliation School of Electrical Eng. #50, Seoul National University
3rd Author's Name Kwang-Seok SEO
3rd Author's Affiliation School of Electrical Eng. #50, Seoul National University
4th Author's Name Yearn-Ik CHOI
4th Author's Affiliation College of Electronics Eng., Ajou University
5th Author's Name Min-Koo Han
5th Author's Affiliation School of Electrical Eng. #50, Seoul National University
Date 2002/6/24
Paper # ED2002-129
Volume (vol) vol.102
Number (no) 175
Page pp.pp.-
#Pages 4
Date of Issue