Presentation 2002/6/24
High Energy Radiation Degradation of High Speed Diodes for Space Applications
J.S. Laird, T. Hirao, S. Onoda, H. Mori, H. Itoh,
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Abstract(in English) High speed (GHz) bandwidth p-i-n photodiodes are an important element in gigabit communication modules. In this paper, we examine the degradation of the high-speed performance of 1.5GHz Si p-i-n photodiodes after MeV electron irradiation using IV, CV and Transient Laser Beam Induced Current.
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Keyword(in English) p-i-n diodes / LBIC / radiation damage
Paper # ED2002-127
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Committee ED
Conference Date 2002/6/24(1days)
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Registration To Electron Devices (ED)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High Energy Radiation Degradation of High Speed Diodes for Space Applications
Sub Title (in English)
Keyword(1) p-i-n diodes
Keyword(2) LBIC
Keyword(3) radiation damage
1st Author's Name J.S. Laird
1st Author's Affiliation Japan Atomic Energy Research Institute(JAERI)()
2nd Author's Name T. Hirao
2nd Author's Affiliation Japan Atomic Energy Research Institute(JAERI)
3rd Author's Name S. Onoda
3rd Author's Affiliation Japan Atomic Energy Research Institute(JAERI)
4th Author's Name H. Mori
4th Author's Affiliation Japan Atomic Energy Research Institute(JAERI)
5th Author's Name H. Itoh
5th Author's Affiliation Japan Atomic Energy Research Institute(JAERI)
Date 2002/6/24
Paper # ED2002-127
Volume (vol) vol.102
Number (no) 175
Page pp.pp.-
#Pages 5
Date of Issue