講演名 | 2002/6/24 A Novel Power MOSFET Structure with Split P-well and Split Poly Design , |
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抄録(和) | |
抄録(英) | A noble high breakdown Power MOSFET structure with split p-well and split poly has been proposed and discussed. A full-simulation combines device simulator 'MEDICI' and process simulator 'TSUPREM-4' to develop this device has also been presented. Floating guard rings and field plate technologies are used to provide a device with a breakdown voltage of 450V. Split p-well with a heavy p+ region design can relocate the breakdown point as well as decrease the bipolar effect, and therefore improve device avalanche breakdown characteristics. Split ploy with proper implant technology can reduce JFET effect, and the on resistance of Power MOSFET can be reduced. In addition, the gate charge performance can be reduced to half of the original design. Combining split p-well and split poly design of Power MOSFT, the performance of this device can be further improved. |
キーワード(和) | |
キーワード(英) | Power MOSFET / on resistance / gate charge |
資料番号 | ED2002-126 |
発行日 |
研究会情報 | |
研究会 | ED |
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開催期間 | 2002/6/24(から1日開催) |
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委員長氏名(和) | |
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幹事氏名(和) | |
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幹事補佐氏名(和) | |
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講演論文情報詳細 | |
申込み研究会 | Electron Devices (ED) |
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本文の言語 | ENG |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | A Novel Power MOSFET Structure with Split P-well and Split Poly Design |
サブタイトル(和) | |
キーワード(1)(和/英) | / Power MOSFET |
第 1 著者 氏名(和/英) | / Feng-Tso Chien |
第 1 著者 所属(和/英) | Dept. of Electronic Engineering, Feng Chia University |
発表年月日 | 2002/6/24 |
資料番号 | ED2002-126 |
巻番号(vol) | vol.102 |
号番号(no) | 175 |
ページ範囲 | pp.- |
ページ数 | 4 |
発行日 |