Presentation 2002/6/24
High-Voltage MOS Devices for Flat Panel Display Drivers
Pyong-Su Kwag, Mueng-Ryul Lee, Oh-Kyong Kwon,
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Abstract(in English) We implemented 25V uni-directional and bi-directional MOS devices in a 0.35um standard low-voltage CMOS process for flat panel display driver applications such as TFT-LCD, STN-LCD and organic EL. In this paper, we present the process integration and the high-voltage device performance of 25V intelligent power integrated circuit processes. We obtained the specific on-resistances of 0.13 mΩ・cm^2 and 0.81mΩ・cm^2 for 25V uni-directional n-channel and p-channel devices, respectively. And the specific on-resistances of 25V bi-directional n-channel and p-channel devices are 0.69 mΩ・cm^2 and 1.41mΩ・cm^2, respectively. The breakdown voltage of developed high-voltage devices is more than 31V and the performance of those high-voltage devices is the best-reported result for the 25V voltage rating devices.
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Keyword(in English) High-Voltage Devices / HVIC / Drift region / LDMOS / RESURF
Paper # ED2002-125
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Committee ED
Conference Date 2002/6/24(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High-Voltage MOS Devices for Flat Panel Display Drivers
Sub Title (in English)
Keyword(1) High-Voltage Devices
Keyword(2) HVIC
Keyword(3) Drift region
Keyword(4) LDMOS
Keyword(5) RESURF
1st Author's Name Pyong-Su Kwag
1st Author's Affiliation Division of Electrical and Computer Engineering, Hanyang University()
2nd Author's Name Mueng-Ryul Lee
2nd Author's Affiliation Division of Electrical and Computer Engineering, Hanyang University
3rd Author's Name Oh-Kyong Kwon
3rd Author's Affiliation Division of Electrical and Computer Engineering, Hanyang University
Date 2002/6/24
Paper # ED2002-125
Volume (vol) vol.102
Number (no) 175
Page pp.pp.-
#Pages 6
Date of Issue