| Presentation | 2002/6/24 A Low Power Highly linear Cascoded Multiple Gated Transistor CMOS RF Amplifier with 10dB IP3 Improvement Tae Wook Kim, Bonkee Kim, Ilku Nam, Beomkyu Ko, Kwyro Lee, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A low power highly linear CMOS RF amplifier circuit composed of Multiple Gated common-source FET TRansistor (MGTR) in cascode configuration is reported. In MGTR amplifier, linearity is improved by using transconductance linearization which can be achieved with canceling the negative peak value of g_m'' of the main transistor with the positive one in auxiliary transistor having different size and gate drive combined in parallel. This enhancement, however, is limited by the distortion originated from the combined influence of g_m' and harmonic feedback, which can greatly be reduced by cascoding MGTR output. IP3 improvement as large as 10dB has been obtained from an experimental RF amplifier designed at 900 MHz and fabricated using 0.35μm BiCMOS technology using only CMOS at similar power consumption and gain as those obtainable from conventional cascode single gate transistor amplifier. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MGTR / CMOS / nonlinearity / IP3 |
| Paper # | ED2002-123 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2002/6/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Low Power Highly linear Cascoded Multiple Gated Transistor CMOS RF Amplifier with 10dB IP3 Improvement |
| Sub Title (in English) | |
| Keyword(1) | MGTR |
| Keyword(2) | CMOS |
| Keyword(3) | nonlinearity |
| Keyword(4) | IP3 |
| 1st Author's Name | Tae Wook Kim |
| 1st Author's Affiliation | Department of EECS, Korea Advanced Institute of Science and Technology() |
| 2nd Author's Name | Bonkee Kim |
| 2nd Author's Affiliation | RF Products, System LSI business, Semiconductor, Samsung Electronics |
| 3rd Author's Name | Ilku Nam |
| 3rd Author's Affiliation | Department of EECS, Korea Advanced Institute of Science and Technology |
| 4th Author's Name | Beomkyu Ko |
| 4th Author's Affiliation | Integrant Technologies |
| 5th Author's Name | Kwyro Lee |
| 5th Author's Affiliation | Department of EECS, Korea Advanced Institute of Science and Technology |
| Date | 2002/6/24 |
| Paper # | ED2002-123 |
| Volume (vol) | vol.102 |
| Number (no) | 175 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |