Presentation 2002/4/10
Phoctocarrier generation and transport at the junction of poly(3-alkylthiophene) and aluminum
K RIKITAKE, D TANIMURA, K KANETO,
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Abstract(in English) We have fabricated the Schottky diodes with the structure of Al/HT-PAT6/Au shows a rectification behaviour and a photovoltaic effect. We will discuss about the photocarrier generation and transport of the device. IV characteristics at various temperature indicate that the carrier transport is tunnel dominating. New estimation method for the thickness of depletion layer is also mentioned.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) polt(3-alkylthiophene) / photocarrier generation / carrier transport / depletion layer
Paper # OME2002-11
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Conference Information
Committee OME
Conference Date 2002/4/10(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Phoctocarrier generation and transport at the junction of poly(3-alkylthiophene) and aluminum
Sub Title (in English)
Keyword(1) polt(3-alkylthiophene)
Keyword(2) photocarrier generation
Keyword(3) carrier transport
Keyword(4) depletion layer
1st Author's Name K RIKITAKE
1st Author's Affiliation Department of Computer Science and Electronics, Kyushu Institute of Technology()
2nd Author's Name D TANIMURA
2nd Author's Affiliation Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology
3rd Author's Name K KANETO
3rd Author's Affiliation Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology
Date 2002/4/10
Paper # OME2002-11
Volume (vol) vol.102
Number (no) 9
Page pp.pp.-
#Pages 4
Date of Issue