Presentation | 2002/4/10 Phoctocarrier generation and transport at the junction of poly(3-alkylthiophene) and aluminum K RIKITAKE, D TANIMURA, K KANETO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have fabricated the Schottky diodes with the structure of Al/HT-PAT6/Au shows a rectification behaviour and a photovoltaic effect. We will discuss about the photocarrier generation and transport of the device. IV characteristics at various temperature indicate that the carrier transport is tunnel dominating. New estimation method for the thickness of depletion layer is also mentioned. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | polt(3-alkylthiophene) / photocarrier generation / carrier transport / depletion layer |
Paper # | OME2002-11 |
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Committee | OME |
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Conference Date | 2002/4/10(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Organic Material Electronics (OME) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Phoctocarrier generation and transport at the junction of poly(3-alkylthiophene) and aluminum |
Sub Title (in English) | |
Keyword(1) | polt(3-alkylthiophene) |
Keyword(2) | photocarrier generation |
Keyword(3) | carrier transport |
Keyword(4) | depletion layer |
1st Author's Name | K RIKITAKE |
1st Author's Affiliation | Department of Computer Science and Electronics, Kyushu Institute of Technology() |
2nd Author's Name | D TANIMURA |
2nd Author's Affiliation | Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology |
3rd Author's Name | K KANETO |
3rd Author's Affiliation | Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology |
Date | 2002/4/10 |
Paper # | OME2002-11 |
Volume (vol) | vol.102 |
Number (no) | 9 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |