Presentation 2002/4/9
Effective Activation of poly-Si film doped by SPC and ELA
Takashi NOGUCHI,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Poly-Si TFT is studied intensively for applying to the active device that addressing FPD (Flat Panel Display) on the substrate such as glass. A formation of S/D with low resistance is important for the TFT. Effective activation of poly-Si film by SPC and/or ELA is described. By adopting the SPC technique for amorphous Si films, an enlargement of dendrite grains peculiar to the case of SPC reduces substantially the resistance even for the p-type film. Subsequent ELA realizes an effective activation by improving further the crystallinity. The effective activation by using SPC and/or ELA applying to the S/D as well as to the SiGe gate has an advantage in high performance Si TFT for FPD such as LCD (Liquid Crystal Display) or OLED (Organic Light Emitting Diode) display as well as in FD SOI (Fully Depleted Silicon on Insulator) transistors for Si LSI. The non-destructive optical analysis for the activation and the crystallinity using spectroscopic technique in UV and in JR is also promising a practical In-Process tool.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) TFT / poly-Si / LCD / OLED / SPC / ELA / SOP / FPD / S/D
Paper # OME2002-7
Date of Issue

Conference Information
Committee OME
Conference Date 2002/4/9(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Vice Chair

Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effective Activation of poly-Si film doped by SPC and ELA
Sub Title (in English)
Keyword(1) TFT
Keyword(2) poly-Si
Keyword(3) LCD
Keyword(4) OLED
Keyword(5) SPC
Keyword(6) ELA
Keyword(7) SOP
Keyword(8) FPD
Keyword(9) S/D
1st Author's Name Takashi NOGUCHI
1st Author's Affiliation Institute d'Electronique Fondamentale, Universite Paris-sud()
Date 2002/4/9
Paper # OME2002-7
Volume (vol) vol.102
Number (no) 8
Page pp.pp.-
#Pages 4
Date of Issue