Presentation | 2002/4/9 Characteristics of Solid-Phase Crystallization of a-Si Depending on the Amount of Ni Source Kenji Makihira, Hiroyuki Nozaki, Tanemasa Asano, Mitsutoshi Miyasaka, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Metal induced lateral crystallization with a small amount of Ni have been investigated. To reduced the amount of Ni, the dependence of characteristics on annealing temperature and on Ni source pattern were appeared. Growth characteristics were changed from uniform to needlelike with reducing annealing temperature. characteristics of growth with high temperature annealing was dominated diffusion of Ni. Needlelike crystal having about 10μm length and about 100nm width was obtained with 450℃ annealing. The dependence of growth characteristics with high annealing temperature on Ni pattern were-considered to be owing Ni distribution and the nucleation rate was depend on Ni pattern at low temperature. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | metal induced lateral crystallization / solid-phase crystallization / poly-Si / pattern dependence |
Paper # | OME2002-6 |
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Committee | OME |
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Conference Date | 2002/4/9(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Organic Material Electronics (OME) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Characteristics of Solid-Phase Crystallization of a-Si Depending on the Amount of Ni Source |
Sub Title (in English) | |
Keyword(1) | metal induced lateral crystallization |
Keyword(2) | solid-phase crystallization |
Keyword(3) | poly-Si |
Keyword(4) | pattern dependence |
1st Author's Name | Kenji Makihira |
1st Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology() |
2nd Author's Name | Hiroyuki Nozaki |
2nd Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology |
3rd Author's Name | Tanemasa Asano |
3rd Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology |
4th Author's Name | Mitsutoshi Miyasaka |
4th Author's Affiliation | Technology Platform Research Center, Seiko Epson Corporation |
Date | 2002/4/9 |
Paper # | OME2002-6 |
Volume (vol) | vol.102 |
Number (no) | 8 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |