Presentation 2002/4/9
Characteristics of Solid-Phase Crystallization of a-Si Depending on the Amount of Ni Source
Kenji Makihira, Hiroyuki Nozaki, Tanemasa Asano, Mitsutoshi Miyasaka,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Metal induced lateral crystallization with a small amount of Ni have been investigated. To reduced the amount of Ni, the dependence of characteristics on annealing temperature and on Ni source pattern were appeared. Growth characteristics were changed from uniform to needlelike with reducing annealing temperature. characteristics of growth with high temperature annealing was dominated diffusion of Ni. Needlelike crystal having about 10μm length and about 100nm width was obtained with 450℃ annealing. The dependence of growth characteristics with high annealing temperature on Ni pattern were-considered to be owing Ni distribution and the nucleation rate was depend on Ni pattern at low temperature.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) metal induced lateral crystallization / solid-phase crystallization / poly-Si / pattern dependence
Paper # OME2002-6
Date of Issue

Conference Information
Committee OME
Conference Date 2002/4/9(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characteristics of Solid-Phase Crystallization of a-Si Depending on the Amount of Ni Source
Sub Title (in English)
Keyword(1) metal induced lateral crystallization
Keyword(2) solid-phase crystallization
Keyword(3) poly-Si
Keyword(4) pattern dependence
1st Author's Name Kenji Makihira
1st Author's Affiliation Center for Microelectronic Systems, Kyushu Institute of Technology()
2nd Author's Name Hiroyuki Nozaki
2nd Author's Affiliation Center for Microelectronic Systems, Kyushu Institute of Technology
3rd Author's Name Tanemasa Asano
3rd Author's Affiliation Center for Microelectronic Systems, Kyushu Institute of Technology
4th Author's Name Mitsutoshi Miyasaka
4th Author's Affiliation Technology Platform Research Center, Seiko Epson Corporation
Date 2002/4/9
Paper # OME2002-6
Volume (vol) vol.102
Number (no) 8
Page pp.pp.-
#Pages 5
Date of Issue