Presentation 2002/4/9
Low Temperature Solid-Phase Crystallization of a-Si/SiO_2 Enhanced by Bond Modulation
Taizoh SADOH, Isao TSUNODA, Kei NAGATOMO, Atsushi KENJO, Masanobu MIYAO,
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Abstract(in English) Effects of Ge doping and ion-irradiation on solid-phase crystallization of amorphous Si on SiO_2 have been investigated. The results showed that the annealing temperature required to crystal nucleation significantly decreased to 400℃ by using both Ge doping and ion-irradiation (25 keV, 1x10^<16> cm^<-2>). In addition, crystal growth along both (111) and (220) direction was confirmed by using X-ray diffraction method. The enhancement of crystal nucleation is discussed on the basis of Si-Si bond-modulation induced by Ge doping and ion-irradiation. This bond modulation method will be a powerful tool to fabricate high-quality and low-cost poly-Si thin-film transistors on glass substrates.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Poly-Si / Solid-phase crystallization / Crystal nucleation / Ge / Ion-irradiation
Paper # OME2002-5
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Committee OME
Conference Date 2002/4/9(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low Temperature Solid-Phase Crystallization of a-Si/SiO_2 Enhanced by Bond Modulation
Sub Title (in English)
Keyword(1) Poly-Si
Keyword(2) Solid-phase crystallization
Keyword(3) Crystal nucleation
Keyword(4) Ge
Keyword(5) Ion-irradiation
1st Author's Name Taizoh SADOH
1st Author's Affiliation Department of Electronics, Kyushu University()
2nd Author's Name Isao TSUNODA
2nd Author's Affiliation Department of Electronics, Kyushu University
3rd Author's Name Kei NAGATOMO
3rd Author's Affiliation Department of Electronics, Kyushu University
4th Author's Name Atsushi KENJO
4th Author's Affiliation Department of Electronics, Kyushu University
5th Author's Name Masanobu MIYAO
5th Author's Affiliation Department of Electronics, Kyushu University
Date 2002/4/9
Paper # OME2002-5
Volume (vol) vol.102
Number (no) 8
Page pp.pp.-
#Pages 5
Date of Issue