Presentation 2002/4/9
Laser-induced melting and crystallization dynamics of silicon thin films
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The liquid-solid interface motion and the temperature history of thin Si films during excimer laser annealing are observed by in-situ experiments combining time-resolved (~1ns) electrical conductance, optical reflectivity/transmissivity, and thermal emission measurements. The temperature response, melt propagation and evolution of the recrystallization process are fundamentally different in the partial-melting and the complete-melting regimes. Lateral crystal growth is induced by spatial control of partial/complete melting. Growth length is limited by the triggering of spontaneous nucleation in supercooled liquid Si and lateral solidification velocity is measured to be about 7.0 m/s.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Laser annealing / Poly-Si thin film / Crystal growth / Melting-solidification
Paper # OME2002-4
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Conference Information
Committee OME
Conference Date 2002/4/9(1days)
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Place (in English)
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Paper Information
Registration To Organic Material Electronics (OME)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Laser-induced melting and crystallization dynamics of silicon thin films
Sub Title (in English)
Keyword(1) Laser annealing
Keyword(2) Poly-Si thin film
Keyword(3) Crystal growth
Keyword(4) Melting-solidification
1st Author's Name Mutsuko HATANO
1st Author's Affiliation Hitachi, Ltd., Central Research Laboratory()
2nd Author's Name Shinya YAMAGUCHI
2nd Author's Affiliation Hitachi, Ltd., Central Research Laboratory
3rd Author's Name Costas. P GRIGOROPOULOS
3rd Author's Affiliation Department of Mechanical Engineering, University of California
Date 2002/4/9
Paper # OME2002-4
Volume (vol) vol.102
Number (no) 8
Page pp.pp.-
#Pages 6
Date of Issue