| Presentation | 2002/4/9 Relationship Between the Crystal Growth of poly-Si and Hydrogen Deposited on the SiO_2 / SiN / Glass Substrate Using ELA Method Naoya KAWAMOTO, Hisashi ABE, Naoto MATSUO, Ryohei TAGUCHI, Tomoyuki NOUDA, Hiroki HAMADA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this study, we clarify the difference of the Raman peak shift and full width at half maximum (FWHM) between the poly-Si films which were recrystallized on three types of substrates, SiO_2 / SiN / glass (SiN), SiO_2 / glass (SiO_2) and quartz substrate, and the behavior of the hydrogen molecules in the SiN film. The nucleation models considering the hydrogen molecules and the thermal conductance are also discussed. It is clarified by optical method for the first time that the crystallinity of the recrystallized poly-Si strongly depends on the substrate film structure. For the poly-Si on the SiN substrate, it is considered that the dominant nucleation site is generated in the Si-liquid by the H_2 burst during the ELA. For the poly-Si on the SiO_2 or quartz substrate, the dominant nucleation site is the defect of the a-Si / SiO_2 or quartz interface, because the crystal growth proceeds from the bottom to the surface of poly-Si according to the thermal distribution. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | excimer laser annealing / SiN substrate / poly-Si / hydrogen molecules / burst / crystal growth mechanism |
| Paper # | OME2002-3 |
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| Committee | OME |
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| Conference Date | 2002/4/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Organic Material Electronics (OME) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Relationship Between the Crystal Growth of poly-Si and Hydrogen Deposited on the SiO_2 / SiN / Glass Substrate Using ELA Method |
| Sub Title (in English) | |
| Keyword(1) | excimer laser annealing |
| Keyword(2) | SiN substrate |
| Keyword(3) | poly-Si |
| Keyword(4) | hydrogen molecules |
| Keyword(5) | burst |
| Keyword(6) | crystal growth mechanism |
| 1st Author's Name | Naoya KAWAMOTO |
| 1st Author's Affiliation | Dept. Electric. & Electron. Eng., Yamaguchi Univ.() |
| 2nd Author's Name | Hisashi ABE |
| 2nd Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
| 3rd Author's Name | Naoto MATSUO |
| 3rd Author's Affiliation | Dept. Electric. & Electron. Eng., Yamaguchi Univ. |
| 4th Author's Name | Ryohei TAGUCHI |
| 4th Author's Affiliation | Dept. Electric. & Electron. Eng., Yamaguchi Univ. |
| 5th Author's Name | Tomoyuki NOUDA |
| 5th Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
| 6th Author's Name | Hiroki HAMADA |
| 6th Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
| Date | 2002/4/9 |
| Paper # | OME2002-3 |
| Volume (vol) | vol.102 |
| Number (no) | 8 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |