Presentation 2002/4/9
Analysis of Reliability of Low-Temperature poly-Si TFTs with Gate-Overlapped LDD
H Nakagawa, T Kawakita, H Yano, T Hatayama, Y Uraoka, T Fuyuki,
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Abstract(in English) We have discussed the degradation mechanism of the Low Temperature Poly-Si GOLD(Gate-Overlapped LDD) Structure TFTs using two-dimensional device simulator. We have calculated distributions of horizontal electric field, vertical field and free carriers for various doping conditions and various bias conditions systematically. Hot carriers are generated far from the interface by the strong vertical electric field. Therefore, less hot electrons are injected into gate oxide. Therefore, the GOLD Structure is suitable for a high performance driving circuit.
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Keyword(in English) Low Temperature Poly-Si TFTs / GOLD / Reliability / Hot carriers / Electric field
Paper # OME2002-2
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Committee OME
Conference Date 2002/4/9(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of Reliability of Low-Temperature poly-Si TFTs with Gate-Overlapped LDD
Sub Title (in English)
Keyword(1) Low Temperature Poly-Si TFTs
Keyword(2) GOLD
Keyword(3) Reliability
Keyword(4) Hot carriers
Keyword(5) Electric field
1st Author's Name H Nakagawa
1st Author's Affiliation Graduate School of Materials Science, Nara Institute of Science and Technology()
2nd Author's Name T Kawakita
2nd Author's Affiliation Graduate School of Materials Science, Nara Institute of Science and Technology
3rd Author's Name H Yano
3rd Author's Affiliation Graduate School of Materials Science, Nara Institute of Science and Technology
4th Author's Name T Hatayama
4th Author's Affiliation Graduate School of Materials Science, Nara Institute of Science and Technology
5th Author's Name Y Uraoka
5th Author's Affiliation Graduate School of Materials Science, Nara Institute of Science and Technology
6th Author's Name T Fuyuki
6th Author's Affiliation Graduate School of Materials Science, Nara Institute of Science and Technology
Date 2002/4/9
Paper # OME2002-2
Volume (vol) vol.102
Number (no) 8
Page pp.pp.-
#Pages 6
Date of Issue