Presentation 2002/4/5
MELD : Reliable Nonvolatile Memory Concept using Nano-Dot Storage Node
Tomoyuki ISHII, Taro OSABE, Toshiyuki MINE, Fumio MURAI, Kazuo YANO,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) The origin of device characteristic deviations of single or few electron memory, which is the most serious obstacle to achieve practical memory, is studied and is compared to fabricated memory cells of various dot radius and densities. The potential to achieve Gb class memory is demonstrated and its benefits MELD are proposed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) na no -dot / nonvolatile memory
Paper # ICD2002-13
Date of Issue

Conference Information
Committee ICD
Conference Date 2002/4/5(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) MELD : Reliable Nonvolatile Memory Concept using Nano-Dot Storage Node
Sub Title (in English)
Keyword(1) na no -dot
Keyword(2) nonvolatile memory
1st Author's Name Tomoyuki ISHII
1st Author's Affiliation Hitachi Central Research Laboratory()
2nd Author's Name Taro OSABE
2nd Author's Affiliation Hitachi Central Research Laboratory
3rd Author's Name Toshiyuki MINE
3rd Author's Affiliation Hitachi Central Research Laboratory
4th Author's Name Fumio MURAI
4th Author's Affiliation Hitachi Central Research Laboratory
5th Author's Name Kazuo YANO
5th Author's Affiliation Hitachi Central Research Laboratory
Date 2002/4/5
Paper # ICD2002-13
Volume (vol) vol.102
Number (no) 3
Page pp.pp.-
#Pages 3
Date of Issue