Presentation | 2002/4/5 MELD : Reliable Nonvolatile Memory Concept using Nano-Dot Storage Node Tomoyuki ISHII, Taro OSABE, Toshiyuki MINE, Fumio MURAI, Kazuo YANO, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The origin of device characteristic deviations of single or few electron memory, which is the most serious obstacle to achieve practical memory, is studied and is compared to fabricated memory cells of various dot radius and densities. The potential to achieve Gb class memory is demonstrated and its benefits MELD are proposed. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | na no -dot / nonvolatile memory |
Paper # | ICD2002-13 |
Date of Issue |
Conference Information | |
Committee | ICD |
---|---|
Conference Date | 2002/4/5(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | MELD : Reliable Nonvolatile Memory Concept using Nano-Dot Storage Node |
Sub Title (in English) | |
Keyword(1) | na no -dot |
Keyword(2) | nonvolatile memory |
1st Author's Name | Tomoyuki ISHII |
1st Author's Affiliation | Hitachi Central Research Laboratory() |
2nd Author's Name | Taro OSABE |
2nd Author's Affiliation | Hitachi Central Research Laboratory |
3rd Author's Name | Toshiyuki MINE |
3rd Author's Affiliation | Hitachi Central Research Laboratory |
4th Author's Name | Fumio MURAI |
4th Author's Affiliation | Hitachi Central Research Laboratory |
5th Author's Name | Kazuo YANO |
5th Author's Affiliation | Hitachi Central Research Laboratory |
Date | 2002/4/5 |
Paper # | ICD2002-13 |
Volume (vol) | vol.102 |
Number (no) | 3 |
Page | pp.pp.- |
#Pages | 3 |
Date of Issue |