| Presentation | 2002/4/5 Impact of Lower Dot Size Scaling on Charge Retention in Doubly Stacked Si Dot Memory Ryuji Ohba, Naoharu Sugiyama, Junji Koga, Ken Uchida, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The quantum dot memory, whose floating gate consists of doubly stacked Si dots, can attain excellent charge retention, keeping a high-speed write/erase (w/e). This is because Coulomb blockade and quantum confinement in a lower dot suppress charge leak between upper dot and channel effectively in low gate voltage (retention state), while such suppression disappears in high gate voltage (w/e state). Since the charge retention is improved exponentially by lower dot size scaling, Si double dot memory is a strong candidate for future low-voltage non-volatile memory. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si dot / Double dot / Non-volatile memory / Coulomb blockade / Quantum confinement |
| Paper # | ICD2002-12 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2002/4/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Impact of Lower Dot Size Scaling on Charge Retention in Doubly Stacked Si Dot Memory |
| Sub Title (in English) | |
| Keyword(1) | Si dot |
| Keyword(2) | Double dot |
| Keyword(3) | Non-volatile memory |
| Keyword(4) | Coulomb blockade |
| Keyword(5) | Quantum confinement |
| 1st Author's Name | Ryuji Ohba |
| 1st Author's Affiliation | Advanced LSI Technology Laboratory, Toshiba Corporation() |
| 2nd Author's Name | Naoharu Sugiyama |
| 2nd Author's Affiliation | Advanced LSI Technology Laboratory, Toshiba Corporation |
| 3rd Author's Name | Junji Koga |
| 3rd Author's Affiliation | Advanced LSI Technology Laboratory, Toshiba Corporation |
| 4th Author's Name | Ken Uchida |
| 4th Author's Affiliation | Advanced LSI Technology Laboratory, Toshiba Corporation |
| Date | 2002/4/5 |
| Paper # | ICD2002-12 |
| Volume (vol) | vol.102 |
| Number (no) | 3 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |