Presentation 2002/4/5
Design of Ferroelectric-Based Logic-in-Memory VLSI
Hiromitsu KIMURA, Takahiro HANYU, Michitaka KAMEYAMA, Yoshikazu FUJIMORI, Takashi NAKAMURA, Hidemi TAKASU,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) A ferroelectric-based logic-in-memory VLSI is proposed to implement a highly-parallel VLSI processor compactly. Since the state-transition scheme of remnant polarization in a ferroelectric capacitor is utilized to perform switching functions, the storage and switching function is merged into a ferroelectric capacitor. The use of a proposed circuit makes it possible to distribute a high-speed storage elements over logic-circuit plane with a small area overhead. As a typical example, a 250MHz 54×54-bit pipelined multiplier is demonstrated with 7.82mm^2 estimated area in a 0.6μm ferroelectric/CMOS technology.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Ferroelectric capacitor / functional pass-gate / pass-transistor network / fine-grain pipelined system
Paper # ICD2002-9
Date of Issue

Conference Information
Committee ICD
Conference Date 2002/4/5(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Design of Ferroelectric-Based Logic-in-Memory VLSI
Sub Title (in English)
Keyword(1) Ferroelectric capacitor
Keyword(2) functional pass-gate
Keyword(3) pass-transistor network
Keyword(4) fine-grain pipelined system
1st Author's Name Hiromitsu KIMURA
1st Author's Affiliation Graduate School of Information Sciences, Tohoku University()
2nd Author's Name Takahiro HANYU
2nd Author's Affiliation Graduate School of Information Sciences, Tohoku University
3rd Author's Name Michitaka KAMEYAMA
3rd Author's Affiliation Graduate School of Information Sciences, Tohoku University
4th Author's Name Yoshikazu FUJIMORI
4th Author's Affiliation Device Technology Div., Semiconductor R&D Headquarters, Rohm Co.,ltd.
5th Author's Name Takashi NAKAMURA
5th Author's Affiliation Device Technology Div., Semiconductor R&D Headquarters, Rohm Co.,ltd.
6th Author's Name Hidemi TAKASU
6th Author's Affiliation Device Technology Div., Semiconductor R&D Headquarters, Rohm Co.,ltd.
Date 2002/4/5
Paper # ICD2002-9
Volume (vol) vol.102
Number (no) 3
Page pp.pp.-
#Pages 6
Date of Issue