講演名 | 2002/6/25 Analytic Model for the Gate Current of MODFET's with and without Photonic Control , |
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抄録(和) | |
抄録(英) | Understanding physical mechanisms of photonic response in microwave devices such as MODEFT's is important in implementing high speed radio-on-fiber systems. We considered the gate current path as two Schottky diodes connected back-to-back where the gate metal plate and the barrier semiconductor layer constitutes the first Schottky diode and the barrier semiconductor layer and the two-dimensional electron (hole) gas formed in the channel constitutes the second Schottky diode. An analytic expression for the gate current in terms of the barrier heights of the two Schottky diodes is derived. When the photonic illumination generates the photocarries in the channel, the barrier heights are modified via the change in the Fermi level. This also explains the shift of the threshold voltage with the photonic illumination. The result shows rather linear relation between the gate current and the photonic illumination intensity under certain conditions. |
キーワード(和) | |
キーワード(英) | MODFET's / Photonic Control / Gate Current / Threshold Voltage / Two-Dimensional Electron(Hole) Gas |
資料番号 | ED2002-165 |
発行日 |
研究会情報 | |
研究会 | ED |
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開催期間 | 2002/6/25(から1日開催) |
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幹事補佐氏名(和) | |
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講演論文情報詳細 | |
申込み研究会 | Electron Devices (ED) |
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本文の言語 | ENG |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | Analytic Model for the Gate Current of MODFET's with and without Photonic Control |
サブタイトル(和) | |
キーワード(1)(和/英) | / MODFET's |
第 1 著者 氏名(和/英) | / Hwe-Jong KIM |
第 1 著者 所属(和/英) | Nano Device research Center, KIST |
発表年月日 | 2002/6/25 |
資料番号 | ED2002-165 |
巻番号(vol) | vol.102 |
号番号(no) | 176 |
ページ範囲 | pp.- |
ページ数 | 4 |
発行日 |