講演名 | 2002/6/25 Measurement of Cross-Sectional Potential of Compound Semiconductor Heterostructures in Vacuum Condition by Kelvin Probe Force Microscopy , |
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抄録(和) | |
抄録(英) | Cross-sectional contact potential images of the GaAs pn junction and InAlAs/InGaAs layered structures have been successfully obtained by Kelvin probe force microscopy (KEM) both in air condition and in vacuum condition. The results showed that the contact potential difference of these materials in vacuum condition were much higher than that in air condition. The spatial resolution of the present KFM was investigated by measuring the InAlAs/InGaAs layered structures with various thicknesses. The lateral resolution of contact potential was improved to be approximately 20 nm in vacuum condition. |
キーワード(和) | |
キーワード(英) | Kelvin probe force microscopy / Cross-sectional potential image / GaAs pn junction / Cleaved surface / InAlAs/InGaAs layered structures / Spatial resolution / Vacuum condition |
資料番号 | SDM2002-120 |
発行日 |
研究会情報 | |
研究会 | SDM |
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開催期間 | 2002/6/25(から1日開催) |
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開催地(英) | |
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幹事補佐氏名(和) | |
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講演論文情報詳細 | |
申込み研究会 | Silicon Device and Materials (SDM) |
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本文の言語 | ENG |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | Measurement of Cross-Sectional Potential of Compound Semiconductor Heterostructures in Vacuum Condition by Kelvin Probe Force Microscopy |
サブタイトル(和) | |
キーワード(1)(和/英) | / Kelvin probe force microscopy |
第 1 著者 氏名(和/英) | / Tengfeng XIE |
第 1 著者 所属(和/英) | Department of Quantum Engineering, Nagoya University:Nagoya University Venture Business Laboratory, Nagoya University |
発表年月日 | 2002/6/25 |
資料番号 | SDM2002-120 |
巻番号(vol) | vol.102 |
号番号(no) | 179 |
ページ範囲 | pp.- |
ページ数 | 5 |
発行日 |