Presentation 2005-11-03
Development of Ultrafast Optical Switch based on Intersubband Transition in Semiconductor Quantum Wells
Ryoichi AKIMOTO, Bingsheng Li, kazumichi AKITA, Toshifumi HASAMA,
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Abstract(in English) The intersubband transition in semiconductor quantum well corresponding to 1.55μm optical communication wavelength band, playing a key role in the implementation of ultra-fast semiconductor optical switch has been realized with II-VI semiconductor materials leading the world. On the basis of this technology, fiber I/O module for intersubband transition ultra-fast semiconductor optical switch has been successfully manufactured to meet requirements both for ultra-fast operation at 1Tb/s, the fastest in the world, and for low switching energy.
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Keyword(in English) Ultrafast optical switch / intersubband transition / quantum well / II-VI semiconductor
Paper # OCS2005-55,OPE2005-85,LQE2005-93
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Committee OCS
Conference Date 2005/10/27(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of Ultrafast Optical Switch based on Intersubband Transition in Semiconductor Quantum Wells
Sub Title (in English)
Keyword(1) Ultrafast optical switch
Keyword(2) intersubband transition
Keyword(3) quantum well
Keyword(4) II-VI semiconductor
1st Author's Name Ryoichi AKIMOTO
1st Author's Affiliation Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technology()
2nd Author's Name Bingsheng Li
2nd Author's Affiliation Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technology
3rd Author's Name kazumichi AKITA
3rd Author's Affiliation Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technology
4th Author's Name Toshifumi HASAMA
4th Author's Affiliation Ultrafast Photonic Devices Laboratory, National Institute of Advanced Industrial Science and Technology
Date 2005-11-03
Paper # OCS2005-55,OPE2005-85,LQE2005-93
Volume (vol) vol.105
Number (no) 379
Page pp.pp.-
#Pages 4
Date of Issue