| Presentation | 2005/11/17 Effects of Metal-Organic interface and Insulator-Organic interface on the Performance of Organic transistor based on TCNQ LB films Hitoshi OHNUKI, Keiichi IKEGAMI, CHANGHAI Wu, Mitsuru IZUMI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The development of new organic semiconductors with improved performance in organic field effect transistors (OFETs) is a major challenge for thin film technology. In particular, there is a particular need to develop air-stable n-type OFETs with performance comparable to that of p-type ones. Previously we reported that the LB films of long-alky-chained tetracyanoquinodimethane (TCNQ) showed a typical n-channel operation behavior using a bottom contact FET structure. Although the stable n-channel operation of the LB film device was observed, its field effect mobility and on-to-off current ratio were far small for actual device application. In order to improve these points, we examined the following two effects on the FET behavior : 1) different metal materials of source and drain electrodes which may enhance the efficiency of electron injection into the LB films, 2) modification of gate insulator surface by self-assembled monolayer which may prevent electron trapping at the interface between the insulator and the LB films. In these experiments, significant effective improvements of FET performance were detected. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Langmuir Blodgett Films / Organic Transistors / TCNQ / n-type FET |
| Paper # | OME2005-93 |
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| Conference Information | |
| Committee | OME |
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| Conference Date | 2005/11/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Organic Material Electronics (OME) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effects of Metal-Organic interface and Insulator-Organic interface on the Performance of Organic transistor based on TCNQ LB films |
| Sub Title (in English) | |
| Keyword(1) | Langmuir Blodgett Films |
| Keyword(2) | Organic Transistors |
| Keyword(3) | TCNQ |
| Keyword(4) | n-type FET |
| 1st Author's Name | Hitoshi OHNUKI |
| 1st Author's Affiliation | Faculty of Marine Technology, Tokyo University of Marine Science and Technology() |
| 2nd Author's Name | Keiichi IKEGAMI |
| 2nd Author's Affiliation | Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology |
| 3rd Author's Name | CHANGHAI Wu |
| 3rd Author's Affiliation | Faculty of Marine Technology, Tokyo University of Marine Science and Technology |
| 4th Author's Name | Mitsuru IZUMI |
| 4th Author's Affiliation | Faculty of Marine Technology, Tokyo University of Marine Science and Technology |
| Date | 2005/11/17 |
| Paper # | OME2005-93 |
| Volume (vol) | vol.105 |
| Number (no) | 425 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |