Presentation 2005/11/17
Interfacial charge phenomena and dielectric properties of Poly thiophene FET
Norihito MATSUKAWA, Eiji ITOH, Keiichi MIYAIRI,
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Abstract(in English) In this study, we have investigated the FET properties and the dielectric properties of Poly(3-hexylthiophene)(P3HT) FET prepared on Ta_2O_5/polyimide double layered gate insulator. We succeeded to reduce the effective thickness of gate insulator by the use of double layered structure consisting of ultra thin polyimide (~30nm) and the high-K dielectric Ta_2O_5 layers. The threshold voltage changed positively by inserting polyimide thin film and this change was attributed to the displacement of electrons from P3HT to electron accepting polyimide films. We have observed the dielectric dispersion based on Maxwell-Wagner model and the interfacial layers of a few nm at the semiconductor/gate insulator interface. It is proved that the interfacial layer exercise an influence on FET properties.
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Keyword(in English) OFET / Poly thiophene / Ta_2O_5 / Polyimide / threshold voltage
Paper # OME2005-91
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Committee OME
Conference Date 2005/11/17(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Interfacial charge phenomena and dielectric properties of Poly thiophene FET
Sub Title (in English)
Keyword(1) OFET
Keyword(2) Poly thiophene
Keyword(3) Ta_2O_5
Keyword(4) Polyimide
Keyword(5) threshold voltage
1st Author's Name Norihito MATSUKAWA
1st Author's Affiliation Faculty of Engineering, Shinshu University()
2nd Author's Name Eiji ITOH
2nd Author's Affiliation Faculty of Engineering, Shinshu University
3rd Author's Name Keiichi MIYAIRI
3rd Author's Affiliation Faculty of Engineering, Shinshu University
Date 2005/11/17
Paper # OME2005-91
Volume (vol) vol.105
Number (no) 425
Page pp.pp.-
#Pages 6
Date of Issue