Presentation 2005/11/17
Observation of the pentacene FET operation by the optical second-harmonic generation
Takaaki Manaka, Eunju Lim, Ryosuke Tamura, Daisuke Yamada, Mitsumasa Iwamoto,
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Abstract(in English) Channel formation process of the pentacene field effect transistor (FET) was shown to be detectable by the optical second harmonic generation (SHG). The SHG signal probed successfully and non-destructively the off- and on-states of the FET. The enhancement of the SHG signal at the off-state due to the EFISHG was observed with applying the source-and drain voltage in the absence of the gate voltage. On the other hand, the enhanced EFISHG remarkably decayed with applying the gate voltage, indicating the channel formation leading to the increase of the channel conductance. It was shown that holes injected from the Source electrode are main carriers in the FET channel, and the potential profile in pentacene film at the off-state is changed by these injected holes, resulting in the channel formation leading to the SHG decrease.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Pentacene / Optical second harmonic generation / Organic FET
Paper # OME2005-90
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Conference Information
Committee OME
Conference Date 2005/11/17(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Observation of the pentacene FET operation by the optical second-harmonic generation
Sub Title (in English)
Keyword(1) Pentacene
Keyword(2) Optical second harmonic generation
Keyword(3) Organic FET
1st Author's Name Takaaki Manaka
1st Author's Affiliation Department of Physical Electronics()
2nd Author's Name Eunju Lim
2nd Author's Affiliation Department of Physical Electronics
3rd Author's Name Ryosuke Tamura
3rd Author's Affiliation Department of Physical Electronics
4th Author's Name Daisuke Yamada
4th Author's Affiliation Department of Physical Electronics
5th Author's Name Mitsumasa Iwamoto
5th Author's Affiliation Department of Physical Electronics
Date 2005/11/17
Paper # OME2005-90
Volume (vol) vol.105
Number (no) 425
Page pp.pp.-
#Pages 5
Date of Issue