Presentation 2005/11/17
Dielectric and Electrical insulating Properties of CYTOP thin film
Hirokazu TAGUCHI, Eiji ITOH, Keiichi MIYAIRI,
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Abstract(in English) We have investigated the dielectric and electrical insulating properties of CYTOP evaluated as amorphous fluorinated polymeric thin film, which has the glass transition temperature of 108℃. After the several hundreds of self-healing breakdown tests, the breakdown strength was 3MV/cm at 30℃. The dielectric loss tangent (tan δ) becomes 10^<-4> order and the leakage current of less than 80pA/cm^2 was obtained at 1.5MV/cm. The breakdown strength strongly depends on the temperature especially around T_g. From dielectric properties and current-voltage characteristics at high temperature region, remarkable increase in both dielectric loss and ionic conductivity influence on the steep decrease of the breakdown mechanism.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) CYTOP / Breakdown / Dielectric property / Glass transition temperature(T_g) / Leakage current
Paper # OME2005-81
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Committee OME
Conference Date 2005/11/17(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Dielectric and Electrical insulating Properties of CYTOP thin film
Sub Title (in English)
Keyword(1) CYTOP
Keyword(2) Breakdown
Keyword(3) Dielectric property
Keyword(4) Glass transition temperature(T_g)
Keyword(5) Leakage current
1st Author's Name Hirokazu TAGUCHI
1st Author's Affiliation Faculty of Engineering, Shinshu University()
2nd Author's Name Eiji ITOH
2nd Author's Affiliation Faculty of Engineering, Shinshu University
3rd Author's Name Keiichi MIYAIRI
3rd Author's Affiliation Faculty of Engineering, Shinshu University
Date 2005/11/17
Paper # OME2005-81
Volume (vol) vol.105
Number (no) 425
Page pp.pp.-
#Pages 6
Date of Issue