| Presentation | 2005-11-25 Investigation of Anomalous Gate Leakage Currents and Gate Control in AlGaN/GaN HFETs having Nanometer-Scale Schottky Gates Seiya KASAI, Junji KOTANI, Hideki Hasegawa, Tamotsu HASHIZUME, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Anomalous gate leakage current and gate control anomaly in AlGaN/GaN HFETs having nanometer-scale Schottky gates were investigated both experimentally and theoretically. It was found that the gate leakage current in the nanometer-scale Schottky gates consisted a lateral tunneling current at the gate edge through the high electric field domain at gate periphery due to large potential difference between the gate metal and the AlGaN surface. The gate control characteristics of nanometer-scale Schottky gate was indicated to be controlled by a so called virtual gate, where the surface potential at the gate periphery was modulated by the lateral gate leakage current, and it should degrade the scalability of the gate control. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / HFET / nanometer-scale Schottky gate / gate leakage current / virtual gate |
| Paper # | R2005-46,ED2005-181,SDM2005-200 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2005/11/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Investigation of Anomalous Gate Leakage Currents and Gate Control in AlGaN/GaN HFETs having Nanometer-Scale Schottky Gates |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | HFET |
| Keyword(3) | nanometer-scale Schottky gate |
| Keyword(4) | gate leakage current |
| Keyword(5) | virtual gate |
| 1st Author's Name | Seiya KASAI |
| 1st Author's Affiliation | Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | Junji KOTANI |
| 2nd Author's Affiliation | Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University |
| 3rd Author's Name | Hideki Hasegawa |
| 3rd Author's Affiliation | Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University |
| 4th Author's Name | Tamotsu HASHIZUME |
| 4th Author's Affiliation | Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University |
| Date | 2005-11-25 |
| Paper # | R2005-46,ED2005-181,SDM2005-200 |
| Volume (vol) | vol.105 |
| Number (no) | 436 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |