Presentation 2005-11-25
Electrical characterization of n-GaN exposed to hydrogen plasma
Masayuki SUDA, Seiji NAKAMURA, Michihiko SUHARA, Tsugunori OKUMURA,
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Abstract(in English) We have studied the electrical characteristics of n-GaN exposed to plasma. In the case of hydrogen plasma, the decrease in the leakage current and the net donor concentration was clearly observed. In addition the decrease in the carriers was also observed in the n-GaN layer exposed to argon plasma, while the increase in leakage current was observed. Thus, these results indicate that the hydrogen atom passivates the defects in the subsurface region. On the other hand, any notable reduction was not observed in the case of nitrogen plasma treatment. Therefore, it is considered that the passivation of the Si donor was related to the intrinsic defects due to the deficiency of nitrogen.
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Keyword(in English) n-GaN / hydrogen / argon / nitrogen / plasma / passivation
Paper # R2005-45,ED2005-180,SDM2005-199
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Committee R
Conference Date 2005/11/18(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electrical characterization of n-GaN exposed to hydrogen plasma
Sub Title (in English)
Keyword(1) n-GaN
Keyword(2) hydrogen
Keyword(3) argon
Keyword(4) nitrogen
Keyword(5) plasma
Keyword(6) passivation
1st Author's Name Masayuki SUDA
1st Author's Affiliation Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University()
2nd Author's Name Seiji NAKAMURA
2nd Author's Affiliation Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University:Division of Electrical and Electronic Engineering, School of Science and Engineering, Tokyo Metropolitan University
3rd Author's Name Michihiko SUHARA
3rd Author's Affiliation Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University:Division of Electrical and Electronic Engineering, School of Science and Engineering, Tokyo Metropolitan University
4th Author's Name Tsugunori OKUMURA
4th Author's Affiliation Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University:Division of Electrical and Electronic Engineering, School of Science and Engineering, Tokyo Metropolitan University
Date 2005-11-25
Paper # R2005-45,ED2005-180,SDM2005-199
Volume (vol) vol.105
Number (no) 434
Page pp.pp.-
#Pages 4
Date of Issue