Presentation | 2005-11-25 Electrical characterization of n-GaN exposed to hydrogen plasma Masayuki SUDA, Seiji NAKAMURA, Michihiko SUHARA, Tsugunori OKUMURA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have studied the electrical characteristics of n-GaN exposed to plasma. In the case of hydrogen plasma, the decrease in the leakage current and the net donor concentration was clearly observed. In addition the decrease in the carriers was also observed in the n-GaN layer exposed to argon plasma, while the increase in leakage current was observed. Thus, these results indicate that the hydrogen atom passivates the defects in the subsurface region. On the other hand, any notable reduction was not observed in the case of nitrogen plasma treatment. Therefore, it is considered that the passivation of the Si donor was related to the intrinsic defects due to the deficiency of nitrogen. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | n-GaN / hydrogen / argon / nitrogen / plasma / passivation |
Paper # | R2005-45,ED2005-180,SDM2005-199 |
Date of Issue |
Conference Information | |
Committee | R |
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Conference Date | 2005/11/18(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Reliability(R) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Electrical characterization of n-GaN exposed to hydrogen plasma |
Sub Title (in English) | |
Keyword(1) | n-GaN |
Keyword(2) | hydrogen |
Keyword(3) | argon |
Keyword(4) | nitrogen |
Keyword(5) | plasma |
Keyword(6) | passivation |
1st Author's Name | Masayuki SUDA |
1st Author's Affiliation | Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University() |
2nd Author's Name | Seiji NAKAMURA |
2nd Author's Affiliation | Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University:Division of Electrical and Electronic Engineering, School of Science and Engineering, Tokyo Metropolitan University |
3rd Author's Name | Michihiko SUHARA |
3rd Author's Affiliation | Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University:Division of Electrical and Electronic Engineering, School of Science and Engineering, Tokyo Metropolitan University |
4th Author's Name | Tsugunori OKUMURA |
4th Author's Affiliation | Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University:Division of Electrical and Electronic Engineering, School of Science and Engineering, Tokyo Metropolitan University |
Date | 2005-11-25 |
Paper # | R2005-45,ED2005-180,SDM2005-199 |
Volume (vol) | vol.105 |
Number (no) | 434 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |