Presentation 2005-11-25
Evaluation Technique in Low-Temperature Polycrystalline Silicon Thin Film Transistors
Yukiharu Uraoka, Takashi Fuyuki,
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Abstract(in English) Low-temperature polycrystalline silicon thin-film-transistor gathers much attention for realizing system on panel. Improving its reliability is very important as well as performance. In this study, we propose reliability evaluation technique to improve the reliability. We analyzed thermal degradation in low temperature poly-Si thin film transistors using infrared thermal imaging microscope. Non-uniform distribution was observed in saturation region along the gate length. Increase of temperature was remarkable in wide gate width, therefore large voltage shift was observed. TFTs with different source and drain wiring indicated different temperature increase, subsequently, different reliability was confirmed. Universal relationship was obtained independent of crystallinity of poly-Si. This curve suggested that we should take the degradation of gate oxide such as electron traps into account. In order to realize the future display, this method will be very effective to improve the reliability.
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Keyword(in English) low temperature poly-Si / Joule Heating / Vth shift / infrared thermal imaging scope
Paper # R2005-38,ED2005-173,SDM2005-192
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Committee R
Conference Date 2005/11/18(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Evaluation Technique in Low-Temperature Polycrystalline Silicon Thin Film Transistors
Sub Title (in English)
Keyword(1) low temperature poly-Si
Keyword(2) Joule Heating
Keyword(3) Vth shift
Keyword(4) infrared thermal imaging scope
1st Author's Name Yukiharu Uraoka
1st Author's Affiliation Nara Institute of Science and Technology()
2nd Author's Name Takashi Fuyuki
2nd Author's Affiliation Nara Institute of Science and Technology
Date 2005-11-25
Paper # R2005-38,ED2005-173,SDM2005-192
Volume (vol) vol.105
Number (no) 434
Page pp.pp.-
#Pages 6
Date of Issue