| Presentation | 2005-11-17 A High Humidity Resistance and High Power Density TaN/Au T-gate pHEMT for Ka-band Applications Hirotaka AMASUGA, Seiki GOTO, Toshihiko SHIGA, Masahiro TOTSUKA, Hajime SASAKI, Tetsuo KUNII, Yoshitsugu YAMAMOTO, Akira INOUE, Tomoki OKU, Takahide ISHIKAWA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A 0.8W/mm high power pHEMT with high humidity resistance is reported. By using tantalum nitride as the refractory gate metal and a silicon nitride layer prepared by a catalytic chemical vapor deposition technique for passivation of this transistor, tough moisture resistance was obtained showing less than 10% Id degradation even after 1000 hours at 130 degrees centigrade and 85% humidity. The structure modifications hardly affect transistor characteristics. A one-stage prematched amplifier with the new pHEMT has achieved 0.8W/mm output power at Vds=8V, with 8.5dB gain and 40% power added efficiency in the Ka-band. These are some of the highest power figures ever reported. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ka-band HPA / HEMT / Humidity resistance / TaN / Cat-CVD |
| Paper # | ED2005-166,MW2005-121 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2005/11/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A High Humidity Resistance and High Power Density TaN/Au T-gate pHEMT for Ka-band Applications |
| Sub Title (in English) | |
| Keyword(1) | Ka-band HPA |
| Keyword(2) | HEMT |
| Keyword(3) | Humidity resistance |
| Keyword(4) | TaN |
| Keyword(5) | Cat-CVD |
| 1st Author's Name | Hirotaka AMASUGA |
| 1st Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Co.() |
| 2nd Author's Name | Seiki GOTO |
| 2nd Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Co. |
| 3rd Author's Name | Toshihiko SHIGA |
| 3rd Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Co. |
| 4th Author's Name | Masahiro TOTSUKA |
| 4th Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Co. |
| 5th Author's Name | Hajime SASAKI |
| 5th Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Co. |
| 6th Author's Name | Tetsuo KUNII |
| 6th Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Co. |
| 7th Author's Name | Yoshitsugu YAMAMOTO |
| 7th Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Co. |
| 8th Author's Name | Akira INOUE |
| 8th Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Co. |
| 9th Author's Name | Tomoki OKU |
| 9th Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Co. |
| 10th Author's Name | Takahide ISHIKAWA |
| 10th Author's Affiliation | High Frequency & Optical Device Works, Mitsubishi Electric Co. |
| Date | 2005-11-17 |
| Paper # | ED2005-166,MW2005-121 |
| Volume (vol) | vol.105 |
| Number (no) | 400 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |