| Presentation | 2005-11-17 A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer Masaaki NISHIJIMA, Tomohiro MURATA, Masahiro HIKITA, Yutaka HIROSE, Noboru NEGORO, Hiroyuki SAKAI, Kaoru INOUE, Yasuhiro UEMOTO, Tsuyoshi TANAKA, Daisuke UEDA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on sapphire substrate. Owing to the lowest (0.4Ω・mm) source resistance of AlGaN/GaN HFETs, the HFETs exhibited excellent DC and RF characteristics, and sufficient ability to operate in the K-band frequency range is obtained. The fabricated MMIC with a CPW-line structure exhibited a small-signal gain higher than 10dB with a 3-dB bandwidth of 20-24.5GHz and that of 13dB at 21.6GHz when biased at a supply voltage of 7V. The 1dB compression point (P_<1dB>) referred to output of 15.4dBm at 21.6GHz was obtained. This work is the first report of MMIC amplifier fabricated on sapphire successfully operating in the K band. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN heterojunction FET / superlattices / MMIC amplifiers / Coplanar waveguides / Sapphire / SiC / source resistance / two-dimensional electron gas (2DEG) / polarization charge |
| Paper # | ED2005-165,MW2005-120 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2005/11/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN heterojunction FET |
| Keyword(2) | superlattices |
| Keyword(3) | MMIC amplifiers |
| Keyword(4) | Coplanar waveguides |
| Keyword(5) | Sapphire |
| Keyword(6) | SiC |
| Keyword(7) | source resistance |
| Keyword(8) | two-dimensional electron gas (2DEG) |
| Keyword(9) | polarization charge |
| 1st Author's Name | Masaaki NISHIJIMA |
| 1st Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | Tomohiro MURATA |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | Masahiro HIKITA |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 4th Author's Name | Yutaka HIROSE |
| 4th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 5th Author's Name | Noboru NEGORO |
| 5th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 6th Author's Name | Hiroyuki SAKAI |
| 6th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 7th Author's Name | Kaoru INOUE |
| 7th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 8th Author's Name | Yasuhiro UEMOTO |
| 8th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 9th Author's Name | Tsuyoshi TANAKA |
| 9th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 10th Author's Name | Daisuke UEDA |
| 10th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| Date | 2005-11-17 |
| Paper # | ED2005-165,MW2005-120 |
| Volume (vol) | vol.105 |
| Number (no) | 400 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |