| Presentation | 2005-11-12 MOVPE growth of GaN on 3c-SiC/Si template : Nitridation effects of template surface Naoki Sawazaki, Takahiro Kobayashi, Myung Soo Cho, Akihiro Hashimoto, Akio Yamamoto, Yoshifumi Ito, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | When a MOVPE GaN film is grown on a 3c-SiC/Si template formed by C^+-ion implantation into Si, the surface of the grown film becomes very rough. The reason for the roughening the surface is clarified to be due to both the island growth of GaN buffer and the direct growth of the epitaxial film at portions of the SiC surface without buffer. It is found that a GaN film with a smooth surface, comparable to that for a film grown on sapphire, can be obtained by employing a nitridation process of the template just before the GaN buffer growth. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / SiC / Si / MOVPE / Nitridation |
| Paper # | CPM2005-165 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 2005/11/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MOVPE growth of GaN on 3c-SiC/Si template : Nitridation effects of template surface |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | SiC |
| Keyword(3) | Si |
| Keyword(4) | MOVPE |
| Keyword(5) | Nitridation |
| 1st Author's Name | Naoki Sawazaki |
| 1st Author's Affiliation | Department of Electrical and Electronics Eng., Faculty of Engineering, University of Fukui() |
| 2nd Author's Name | Takahiro Kobayashi |
| 2nd Author's Affiliation | Department of Electrical and Electronics Eng., Faculty of Engineering, University of Fukui |
| 3rd Author's Name | Myung Soo Cho |
| 3rd Author's Affiliation | Department of Electrical and Electronics Eng., Faculty of Engineering, University of Fukui |
| 4th Author's Name | Akihiro Hashimoto |
| 4th Author's Affiliation | Department of Electrical and Electronics Eng., Faculty of Engineering, University of Fukui |
| 5th Author's Name | Akio Yamamoto |
| 5th Author's Affiliation | Department of Electrical and Electronics Eng., Faculty of Engineering, University of Fukui |
| 6th Author's Name | Yoshifumi Ito |
| 6th Author's Affiliation | The Wakasa Wan Energy research Center |
| Date | 2005-11-12 |
| Paper # | CPM2005-165 |
| Volume (vol) | vol.105 |
| Number (no) | 394 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |