| Presentation | 2005/10/6 (11-20) InN Growth on Nitridated (10-12) Sapphire by ECR-MBE : Investigation of Non-polar InN Y. Kumagai, A. Tsuyuguchi, K. Teraki, T. Araki, H. Naoi, Y. Nanishi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A-plane (11-20) InN has been successfully grown on R-plane (10-12) sapphire substrate by electron cyclotron resonance plasma-exited molecular beam epitaxy through substrate nitridation process. The substrate nitridation of R-plane sapphire by ECR nitrogen plasma was carried out at 430℃ for 10 and 15 minutes. The results of reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Photoluminescence (PL) indicated the formation of A-plane InN on R-plane sapphire. Inclusion of cubic InN was also observed together with A-plane InN through RHEED and XRD measurements in case of A-plane InN layer grown on 10min nitridated substrate. However, when the nitridation time of R-plane sapphire by ECR nitrogen plasma increased to 15 minutes, it is confirmed that formation of cubic InN was successfully suppressed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ECR-MBE / substrate nitridation / R-plane (10-12) sapphire / A-plane (11-20) InN / cubic InN |
| Paper # | ED2005-120,CPM2005-107,LQE005-47 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2005/10/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | (11-20) InN Growth on Nitridated (10-12) Sapphire by ECR-MBE : Investigation of Non-polar InN |
| Sub Title (in English) | |
| Keyword(1) | ECR-MBE |
| Keyword(2) | substrate nitridation |
| Keyword(3) | R-plane (10-12) sapphire |
| Keyword(4) | A-plane (11-20) InN |
| Keyword(5) | cubic InN |
| 1st Author's Name | Y. Kumagai |
| 1st Author's Affiliation | Department of Photonics, Ritsumeikan University() |
| 2nd Author's Name | A. Tsuyuguchi |
| 2nd Author's Affiliation | Department of Photonics, Ritsumeikan University |
| 3rd Author's Name | K. Teraki |
| 3rd Author's Affiliation | Department of Photonics, Ritsumeikan University |
| 4th Author's Name | T. Araki |
| 4th Author's Affiliation | Department of Photonics, Ritsumeikan University |
| 5th Author's Name | H. Naoi |
| 5th Author's Affiliation | Center for Promotion of the COE Program, Ritsumeikan University |
| 6th Author's Name | Y. Nanishi |
| 6th Author's Affiliation | Department of Photonics, Ritsumeikan University |
| Date | 2005/10/6 |
| Paper # | ED2005-120,CPM2005-107,LQE005-47 |
| Volume (vol) | vol.105 |
| Number (no) | 327 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |