| Presentation | 2005/10/6 Electrical Properties of Ni/i-AlGaN/GaN Gate Structures and Influence of Thermal Annealing Takayuki SAWADA, Satoshi YONETA, Kensuke TAKAHASHI, Seong Woo KIM, Toshimasa SUZUKI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Electrical properties of Ni/i-AlGaN/GaN Schottky gate structures were investigated. Existence of surface native oxide degraded the effective Schottky barrier height (SBH) by 0.1-0.2 eV, accompanied with significant increase of the reverse leakage current. Annealing in N_2 improved the effective SBH and the leakage current. The optimum temperature depended on both the surface preparation condition and the Al composition. Addition of a thin anodic Al_2O_3 layer onto i-AlGaN effectively reduced the leakage current down to 10^<-6>A/cm^2. Hall effect measurements of bare i-AlGaN(x=0.20)/GaN samples revealed that the annealing in wet-O_2 even at 600℃ led to degradation of the electron mobility in 2DEG. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AlGaN/GaN Heterostructure / Schottky / Thermal Annealing / Electrical Properties |
| Paper # | ED2005-135,CPM2005-122,LQE005-62 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2005/10/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Properties of Ni/i-AlGaN/GaN Gate Structures and Influence of Thermal Annealing |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN/GaN Heterostructure |
| Keyword(3) | Schottky |
| Keyword(4) | Thermal Annealing |
| Keyword(5) | Electrical Properties |
| 1st Author's Name | Takayuki SAWADA |
| 1st Author's Affiliation | Hokkaido Institute of Technology() |
| 2nd Author's Name | Satoshi YONETA |
| 2nd Author's Affiliation | Hokkaido Institute of Technology |
| 3rd Author's Name | Kensuke TAKAHASHI |
| 3rd Author's Affiliation | Hokkaido Institute of Technology |
| 4th Author's Name | Seong Woo KIM |
| 4th Author's Affiliation | Nippon Institute of Technology |
| 5th Author's Name | Toshimasa SUZUKI |
| 5th Author's Affiliation | Nippon Institute of Technology |
| Date | 2005/10/6 |
| Paper # | ED2005-135,CPM2005-122,LQE005-62 |
| Volume (vol) | vol.105 |
| Number (no) | 325 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |