| Presentation | 2005/10/6 Characteristics of AlGaN/GaN HEMT on (111) Silicon Substrates Yoshiaki KATAYAMA, Hiroyasu ISHIKAWA, Takashi EGAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN/GaN HEMTs were fabricated on Si and Sapphire substrates inorder to study the thermal conductivity of the substrates. The HEMT devices fabricated on Silicon substrate show superior device characteristics than those on the Sapphire substrates. For example the Si substrate samples have high thermal conductivity, cheap manufacturing possible for large size substrates. Further it is easy to fabricate HEMT device and reduce the thickness of the Si substrate whereas thinning the Sapphire substrate is very difficult. This study was conducted with the primary aim of measuring the temperature dependent conductivity of the substrates namely silicon and Sapphire. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / HEMT / Thermal conductivity / Si |
| Paper # | ED2005-131,CPM2005-118,LQE005-58 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2005/10/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characteristics of AlGaN/GaN HEMT on (111) Silicon Substrates |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | HEMT |
| Keyword(3) | Thermal conductivity |
| Keyword(4) | Si |
| 1st Author's Name | Yoshiaki KATAYAMA |
| 1st Author's Affiliation | Nagoya Institute of Technology() |
| 2nd Author's Name | Hiroyasu ISHIKAWA |
| 2nd Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| 3rd Author's Name | Takashi EGAWA |
| 3rd Author's Affiliation | Research Center for Micro-Structure Devices, Nagoya Institute of Technology |
| Date | 2005/10/6 |
| Paper # | ED2005-131,CPM2005-118,LQE005-58 |
| Volume (vol) | vol.105 |
| Number (no) | 325 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |