| Presentation | 2005/10/6 Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power Applications Ken Nakata, Takeshi Kawasaki, Seiji Yaegassi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and high breakdown characteristics. But it is difficult to realize normally-off characteristics due to the high 2-DEG density. To solve the issue, we have developed AlGaN/GaN HEMTs with recessed gate structure. We obtained the HEMT with the threshold voltage of 0.3V, which means completely normally-off characteristics, and observed no significant on-state resistance increase. The on-state resistance of 2.0mΩcm^2 and the breakdown voltage of 400V were also obtained. The obtained on-state resistance is the lowest value of normally-off AlGaN/GaN HEMTs to our best knowledge. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / GaN / HEMT / power switching device / low specific on-state resistance / high breakdown voltage / normally-off |
| Paper # | ED2005-129,CPM2005-116,LQE005-56 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2005/10/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power Applications |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | GaN |
| Keyword(3) | HEMT |
| Keyword(4) | power switching device |
| Keyword(5) | low specific on-state resistance |
| Keyword(6) | high breakdown voltage |
| Keyword(7) | normally-off |
| 1st Author's Name | Ken Nakata |
| 1st Author's Affiliation | Eudyna Devices Inc.() |
| 2nd Author's Name | Takeshi Kawasaki |
| 2nd Author's Affiliation | Eudyna Devices Inc. |
| 3rd Author's Name | Seiji Yaegassi |
| 3rd Author's Affiliation | Eudyna Devices Inc. |
| Date | 2005/10/6 |
| Paper # | ED2005-129,CPM2005-116,LQE005-56 |
| Volume (vol) | vol.105 |
| Number (no) | 325 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |