Presentation	2005/10/6 Pnp AlGaN/GaN HBTs Operating Under High-Temperature and High-Power Kazuhide KUMAKURA, Toshiki MAKIMOTO,
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Abstract(in English)	Nitride-based HBTs are promising devices for high-temperature and high-power operation. We have reported common-emitter current-voltage characteristics of Pnp AlGaN/GaN HBTs for the first time. Here, we report Pnp AlGaN/GaN HBTs that operated under high breakdown field and high-temperature above 550℃, and also report a transport mechanism at high-temperatures.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Pnp AlGaN/GaN HBTs / high-temperature operation / high-power operation / large breakdown field
Paper #	ED2005-128,CPM2005-115,LQE005-55
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Conference Information
Committee	ED
Conference Date	2005/10/6(1days)
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Paper Information
Registration To	Electron Devices (ED)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Pnp AlGaN/GaN HBTs Operating Under High-Temperature and High-Power
Sub Title (in English)
Keyword(1)	Pnp AlGaN/GaN HBTs
Keyword(2)	high-temperature operation
Keyword(3)	high-power operation
Keyword(4)	large breakdown field
1st Author's Name	Kazuhide KUMAKURA
1st Author's Affiliation	NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation()
2nd Author's Name	Toshiki MAKIMOTO
2nd Author's Affiliation	NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
Date	2005/10/6
Paper #	ED2005-128,CPM2005-115,LQE005-55
Volume (vol)	vol.105
Number (no)	325
Page	pp.pp.-
#Pages	4
Date of Issue