Presentation | 2005/10/6 Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs Kenji SHIOJIMA, Takashi MAKIMURA, Tetsuya SUEMITSU, Naoteru SHIGEKAWA, Masanobu HIROKI, Haruki YOKOYAMA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The DC and RF performances of short-gate AlGaN/GaN high-electron transistors (HEMT) on SiC and sapphire substrates have been investigated. There were differences in surface morphology, electron mobility, and contact resistance between SiC and sapphier wafers. The contact resistance limited and dispersed measured transconductance (g_m). The intrinsic g_m after subtraction of the source resistance contribution and gate-length dependences of cut-off frequency were the same. These results indicates that the effective electron velocity is the same for both samples. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | AlGaN/GaN HEMT / short gate / surface morphology / DC RF characteristics |
Paper # | ED2005-127,CPM2005-114,LQE005-54 |
Date of Issue |
Conference Information | |
Committee | ED |
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Conference Date | 2005/10/6(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs |
Sub Title (in English) | |
Keyword(1) | AlGaN/GaN HEMT |
Keyword(2) | short gate |
Keyword(3) | surface morphology |
Keyword(4) | DC RF characteristics |
1st Author's Name | Kenji SHIOJIMA |
1st Author's Affiliation | NTT Corporation NTT Photonics Laboratories() |
2nd Author's Name | Takashi MAKIMURA |
2nd Author's Affiliation | NTT Corporation NTT Photonics Laboratories |
3rd Author's Name | Tetsuya SUEMITSU |
3rd Author's Affiliation | NTT Corporation NTT Photonics Laboratories |
4th Author's Name | Naoteru SHIGEKAWA |
4th Author's Affiliation | NTT Corporation NTT Photonics Laboratories |
5th Author's Name | Masanobu HIROKI |
5th Author's Affiliation | NTT Corporation NTT Photonics Laboratories |
6th Author's Name | Haruki YOKOYAMA |
6th Author's Affiliation | NTT Corporation NTT Photonics Laboratories |
Date | 2005/10/6 |
Paper # | ED2005-127,CPM2005-114,LQE005-54 |
Volume (vol) | vol.105 |
Number (no) | 325 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |