Presentation 2005/10/6
Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs
Kenji SHIOJIMA, Takashi MAKIMURA, Tetsuya SUEMITSU, Naoteru SHIGEKAWA, Masanobu HIROKI, Haruki YOKOYAMA,
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Abstract(in English) The DC and RF performances of short-gate AlGaN/GaN high-electron transistors (HEMT) on SiC and sapphire substrates have been investigated. There were differences in surface morphology, electron mobility, and contact resistance between SiC and sapphier wafers. The contact resistance limited and dispersed measured transconductance (g_m). The intrinsic g_m after subtraction of the source resistance contribution and gate-length dependences of cut-off frequency were the same. These results indicates that the effective electron velocity is the same for both samples.
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Keyword(in English) AlGaN/GaN HEMT / short gate / surface morphology / DC RF characteristics
Paper # ED2005-127,CPM2005-114,LQE005-54
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Committee ED
Conference Date 2005/10/6(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs
Sub Title (in English)
Keyword(1) AlGaN/GaN HEMT
Keyword(2) short gate
Keyword(3) surface morphology
Keyword(4) DC RF characteristics
1st Author's Name Kenji SHIOJIMA
1st Author's Affiliation NTT Corporation NTT Photonics Laboratories()
2nd Author's Name Takashi MAKIMURA
2nd Author's Affiliation NTT Corporation NTT Photonics Laboratories
3rd Author's Name Tetsuya SUEMITSU
3rd Author's Affiliation NTT Corporation NTT Photonics Laboratories
4th Author's Name Naoteru SHIGEKAWA
4th Author's Affiliation NTT Corporation NTT Photonics Laboratories
5th Author's Name Masanobu HIROKI
5th Author's Affiliation NTT Corporation NTT Photonics Laboratories
6th Author's Name Haruki YOKOYAMA
6th Author's Affiliation NTT Corporation NTT Photonics Laboratories
Date 2005/10/6
Paper # ED2005-127,CPM2005-114,LQE005-54
Volume (vol) vol.105
Number (no) 325
Page pp.pp.-
#Pages 4
Date of Issue