Presentation 2005/10/6
Characterization of InN/InGaN quantum well structures by RF-MBE
Masahito KUROUCHI, Shinya TAKADO, Hiroyuki NAOI, Tsutomu ARAKI, Yasushi NANISHI,
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Abstract(in English) InN and In-rich InGaN are considered to be promising materials for future device such as high-efficiency laser diodes for optical communications. Quantum well structures are essential for laser diodes. InN/InGaN quantum well structures have been successfully fabricated on InN templates grown on (0001) sapphire substrate by RF plasma assisted molecular beam epitaxy. The multiple quantum well structure was confirmed by observing the satellite peaks up to 2nd order of X-ray diffraction. PL peak emission from InN/InGaN single quantum well layers was observed at 77K, and the PL peak energy slightly decreased with increasing well width. This dependence can be expected by quantum size effect, quantum confinement Stark effect and band filling effect.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Quantum well structure / InN / In-rich InGaN / X-ray diffraction / optical property / RF-MBE
Paper # ED2005-123,CPM2005-110,LQE005-50
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Committee ED
Conference Date 2005/10/6(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characterization of InN/InGaN quantum well structures by RF-MBE
Sub Title (in English)
Keyword(1) Quantum well structure
Keyword(2) InN
Keyword(3) In-rich InGaN
Keyword(4) X-ray diffraction
Keyword(5) optical property
Keyword(6) RF-MBE
1st Author's Name Masahito KUROUCHI
1st Author's Affiliation Department of Photonics, Ritsumeikan University()
2nd Author's Name Shinya TAKADO
2nd Author's Affiliation Department of Photonics, Ritsumeikan University
3rd Author's Name Hiroyuki NAOI
3rd Author's Affiliation Center for Promotion of The 21st Century COE Program, Ritsumeikan University
4th Author's Name Tsutomu ARAKI
4th Author's Affiliation Department of Photonics, Ritsumeikan University
5th Author's Name Yasushi NANISHI
5th Author's Affiliation Department of Photonics, Ritsumeikan University
Date 2005/10/6
Paper # ED2005-123,CPM2005-110,LQE005-50
Volume (vol) vol.105
Number (no) 325
Page pp.pp.-
#Pages 6
Date of Issue