| Presentation | 2005/9/29 Hydrogen-induced defect generation in SiO2 Masayasu MIYATA, DUIN Adri C. T. VAN, KHELI Jamil TAHIR, III William A. GODDARD, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Using the new type of Force Field (Reax FF), which reproduces first principle adiabatic potential, we have executed Molecular Dynamics simulations for amorphous SiO_2 systems to study the effect of Hydrogen atoms. As a result, an interesting defect state has been discovered. After the structural optimization with first principle calculation, it is also found that this new defect state has a unique electronic structure that will play an important role to cause dielectric breakdown in ultra-thin gate oxide. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Molecular dynamics simulation / silicon oxide / hydrogen / defect / First principle calculation / dielectric breakdown |
| Paper # | SDM2005-178 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2005/9/29(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Hydrogen-induced defect generation in SiO2 |
| Sub Title (in English) | |
| Keyword(1) | Molecular dynamics simulation |
| Keyword(2) | silicon oxide |
| Keyword(3) | hydrogen |
| Keyword(4) | defect |
| Keyword(5) | First principle calculation |
| Keyword(6) | dielectric breakdown |
| 1st Author's Name | Masayasu MIYATA |
| 1st Author's Affiliation | Advanced Materials Laboratory, Technology Platform Research Center, Corporate R&D division, Seiko Epson corporation() |
| 2nd Author's Name | DUIN Adri C. T. VAN |
| 2nd Author's Affiliation | Materials and Process Simulation Center, Beckman Institute, California Institute of Technology |
| 3rd Author's Name | KHELI Jamil TAHIR |
| 3rd Author's Affiliation | Materials and Process Simulation Center, Beckman Institute, California Institute of Technology |
| 4th Author's Name | III William A. GODDARD |
| 4th Author's Affiliation | Materials and Process Simulation Center, Beckman Institute, California Institute of Technology |
| Date | 2005/9/29 |
| Paper # | SDM2005-178 |
| Volume (vol) | vol.105 |
| Number (no) | 317 |
| Page | pp.pp.- |
| #Pages | 6 |
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