| Presentation | 2005/10/7 PL characterization of In surface segregation in InGaN/GaN Multiple Quantum Well Structures using MOCVD reactor (2"×6 wafers) Kazutada IKENAGA, Akinori UBUKATA, Akira YAMAGUCHI, Nakao AKUTSU, Kinji FUJII, Kou MATSUMOTO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | It is supposed that controlling the degree of In segregation in InGaN quantum well is important to realize a high quantum efficiency. It is necessary to study the relationship between growth conditions and In segregation in light of realizing high quantum efficiency and a uniform wavelength at the same time, because a large distribution of growth conditions in a large scale horizontal reactor sometimes happen because of source gas consumption or variation of effective V/III ratio. In this work, we have studied variation of the photoluminescence blue shift of InGaN/GaN quantum wells as a function of excitation power. The samples were prepared under the condition to have a relatively large In segregation. It is shown that thin quantum well structure with a small surface In segregation was desirable for improving PL efficiency as well as the uniformity. It is also shown that the interface abruptness of quantum wells was improved by adding hydrogen gas during the growth of barrier layers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOCVD / InGaN/GaN quantum well structure / In surface segregation / local state |
| Paper # | ED2005-156,CPM2005-143,LQE005-83 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2005/10/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | PL characterization of In surface segregation in InGaN/GaN Multiple Quantum Well Structures using MOCVD reactor (2"×6 wafers) |
| Sub Title (in English) | |
| Keyword(1) | MOCVD |
| Keyword(2) | InGaN/GaN quantum well structure |
| Keyword(3) | In surface segregation |
| Keyword(4) | local state |
| 1st Author's Name | Kazutada IKENAGA |
| 1st Author's Affiliation | Compound Semiconductor Equipment Division, TAIYO NIPPON SANSO Corporation() |
| 2nd Author's Name | Akinori UBUKATA |
| 2nd Author's Affiliation | Compound Semiconductor Equipment Division, TAIYO NIPPON SANSO Corporation |
| 3rd Author's Name | Akira YAMAGUCHI |
| 3rd Author's Affiliation | Compound Semiconductor Equipment Division, TAIYO NIPPON SANSO Corporation |
| 4th Author's Name | Nakao AKUTSU |
| 4th Author's Affiliation | Compound Semiconductor Equipment Division, TAIYO NIPPON SANSO Corporation |
| 5th Author's Name | Kinji FUJII |
| 5th Author's Affiliation | Compound Semiconductor Equipment Division, TAIYO NIPPON SANSO Corporation |
| 6th Author's Name | Kou MATSUMOTO |
| 6th Author's Affiliation | Compound Semiconductor Equipment Division, TAIYO NIPPON SANSO Corporation |
| Date | 2005/10/7 |
| Paper # | ED2005-156,CPM2005-143,LQE005-83 |
| Volume (vol) | vol.105 |
| Number (no) | 330 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |