| Presentation | 2005/10/7 Hydrogen generation by photoelectrolysis using nitride semiconductors Katsushi FUJII, Masato ONO, Takashi ITO, Yasuhiro IWAKI, Kazuhiro OHKAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The photoelectrochemical characteristics of nitride semiconductors were investigated. The resistivity of the nitrides should be low in order to achieve good carrier transportation. The photocurrent for the n- and p-type GaN increased with the FWHM of (0002) X-ray rocking curve decreasing. For In_xGa_<1-x>N case, the absorption of continuous-wave light like sun-light increases with In composition, however, the conduction band-edge potential shifted to the plus direction with In composition increasing. Therefore, the optimum In composition depending on the applied bias exists when In_xGa_<1-x>N is used for the photoelectrolysis. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nitride photocatalyst / GaN / In_xGa_<1-x>N / Photoelectrochemistry / Photoelectrolysis of water / H_2 evolution |
| Paper # | ED2005-149,CPM2005-136,LQE005-76 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2005/10/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Hydrogen generation by photoelectrolysis using nitride semiconductors |
| Sub Title (in English) | |
| Keyword(1) | Nitride photocatalyst |
| Keyword(2) | GaN |
| Keyword(3) | In_xGa_<1-x>N |
| Keyword(4) | Photoelectrochemistry |
| Keyword(5) | Photoelectrolysis of water |
| Keyword(6) | H_2 evolution |
| 1st Author's Name | Katsushi FUJII |
| 1st Author's Affiliation | Nakamura Inhomogeneous Crystal Project, Japan Science and Technology Agency (JST)() |
| 2nd Author's Name | Masato ONO |
| 2nd Author's Affiliation | Dept. of Applied Physics, Tokyo University of Science |
| 3rd Author's Name | Takashi ITO |
| 3rd Author's Affiliation | Dept. of Applied Physics, Tokyo University of Science |
| 4th Author's Name | Yasuhiro IWAKI |
| 4th Author's Affiliation | Dept. of Applied Physics, Tokyo University of Science |
| 5th Author's Name | Kazuhiro OHKAWA |
| 5th Author's Affiliation | Nakamura Inhomogeneous Crystal Project, Japan Science and Technology Agency (JST):Dept. of Applied Physics, Tokyo University of Science |
| Date | 2005/10/7 |
| Paper # | ED2005-149,CPM2005-136,LQE005-76 |
| Volume (vol) | vol.105 |
| Number (no) | 330 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |