| Presentation | 2005/10/7 Hydrogen Gas Sensors of Pd Schottky Diodes Formed on AlGaN/GaN Heterostructure Kazushi MATSUO, Takeshi KIMURA, Hideki HASEGAWA, Tamotsu HASHIZUME, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Basic H_2 gas-sensing characteristics of Pd Schottky diodes formed on the AlGaN/GaN heterostructure were investigated in vacuum. By introducing a novel surface control process to reduce reverse leakage currents, an unprecedented high H_2 sensitivity was achieved where 1 Torr hydrogen caused five orders of magnitude change of current. Surprisingly, the surface control process did not change the C-V characteristics which showed an unexpectedly large shift 1,000 mV on H_2 exposure. Transient waveforms were almost exponential for the logarithm of current, and response speed increased with increase of H_2 pressure and temperature. These results were explained in terms of Schokkty barrier height due to adsorption of atomic hydrogen generated by Pd, its influence on current transport mechanism and hydrogen storage in Pd. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN / Pd / Schottky diode / hydrogen sensor / atomic hydrogen |
| Paper # | ED2005-148,CPM2005-135,LQE005-75 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2005/10/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Hydrogen Gas Sensors of Pd Schottky Diodes Formed on AlGaN/GaN Heterostructure |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN |
| Keyword(2) | Pd |
| Keyword(3) | Schottky diode |
| Keyword(4) | hydrogen sensor |
| Keyword(5) | atomic hydrogen |
| 1st Author's Name | Kazushi MATSUO |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | Takeshi KIMURA |
| 2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 3rd Author's Name | Hideki HASEGAWA |
| 3rd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 4th Author's Name | Tamotsu HASHIZUME |
| 4th Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| Date | 2005/10/7 |
| Paper # | ED2005-148,CPM2005-135,LQE005-75 |
| Volume (vol) | vol.105 |
| Number (no) | 330 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |