| Presentation | 2005/10/7 Fabrication processes of electroluminescent devices based on GaN crystallites Taichi Baba, Miwako Akiyama, Shinichi Egawa, Toshiaki Kobayashi, Noriyuki Hasunuma, Tohru Honda, Hideo Kawanishi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Electroluminescent devices (ELDs) were fabricated using GaN crystallites as emission layers. Cathodoluminescense (CL) spectra of GaN crystallites, which were annealed in vacuum at the different temperatures, were observed at 20K. Those intensity tends to be increased as raising their anneal temperature. The peak energy of their luminescence corresponds to the near-band-edge of wurtzite GaN although a part of the components of their CL spectra corresponds to the visible spectral regions. In the case of the fabrication of light-emission layers in the ELDs, the sedimentation with the selection of GaN crystallites was performed. The size selection of GaN crystallites is effective for the realization of thin and uniform emission layers, which lead to the reduction of driven voltages for the ELDs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN crystallites / anneal / CL / Sedimentation technique |
| Paper # | ED2005-142,CPM2005-129,LQE005-69 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2005/10/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication processes of electroluminescent devices based on GaN crystallites |
| Sub Title (in English) | |
| Keyword(1) | GaN crystallites |
| Keyword(2) | anneal |
| Keyword(3) | CL |
| Keyword(4) | Sedimentation technique |
| 1st Author's Name | Taichi Baba |
| 1st Author's Affiliation | Department of Electronic Engineering, Kogakuin University() |
| 2nd Author's Name | Miwako Akiyama |
| 2nd Author's Affiliation | Department of Electronic Engineering, Kogakuin University |
| 3rd Author's Name | Shinichi Egawa |
| 3rd Author's Affiliation | Department of Electronic Engineering, Kogakuin University |
| 4th Author's Name | Toshiaki Kobayashi |
| 4th Author's Affiliation | Department of Electronic Engineering, Kogakuin University |
| 5th Author's Name | Noriyuki Hasunuma |
| 5th Author's Affiliation | Department of Electronic Engineering, Kogakuin University |
| 6th Author's Name | Tohru Honda |
| 6th Author's Affiliation | Department of Electronic Engineering, Kogakuin University |
| 7th Author's Name | Hideo Kawanishi |
| 7th Author's Affiliation | Department of Electronic Engineering, Kogakuin University |
| Date | 2005/10/7 |
| Paper # | ED2005-142,CPM2005-129,LQE005-69 |
| Volume (vol) | vol.105 |
| Number (no) | 330 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |